Inventor
HWANG JEONG-WOOK
KR2 patents
Patents
2 patentsUS7064059B2Jun 20, 2006
Method of forming dual damascene metal interconnection employing sacrificial metal oxide layer
SAMSUNG ELECTRONICS CO LTD12 citations81
US7365021B2Apr 29, 2008
Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution
SAMSUNG ELECTRONICS CO LTD10 citations80