Inventor
FRONHEISER JODY
US15 patents
⚠️ This page may combine multiple inventors who share the name “FRONHEISER JODY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
10 patentsUS9165837B1Oct 20, 2015
Method to form defect free replacement fins by H2 anneal
GLOBALFOUNDRIES INC35 citations94
US8728885B1May 20, 2014
Methods of forming a three-dimensional semiconductor device with a nanowire channel structure
GLOBALFOUNDRIES INC31 citations92
US9236452B2Jan 12, 2016
Raised source/drain EPI with suppressed lateral EPI overgrowth
GLOBALFOUNDRIES INC10 citations83
US8815685B2Aug 26, 2014
Methods for fabricating integrated circuits having confined epitaxial growth regions
GLOBALFOUNDRIES INC10 citations83
US9647086B2May 9, 2017
Early PTS with buffer for channel doping control
GLOBALFOUNDRIES INC5 citations71
US9882052B2Jan 30, 2018
Forming defect-free relaxed SiGe fins
GLOBALFOUNDRIES INC2 citations68
US9240342B2Jan 19, 2016
Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process
GLOBALFOUNDRIES INC2 citations62
US10680065B2Jun 9, 2020
Field-effect transistors with a grown silicon-germanium channel
GLOBALFOUNDRIES INC0 citations51
US9614058B2Apr 4, 2017
Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices
GLOBALFOUNDRIES INC1 citations51
US9679972B1Jun 13, 2017
Thin strain relaxed buffers with multilayer film stacks
GLOBALFOUNDRIES INC0 citations45
IBM
4 patentsUS9564486B2Feb 7, 2017
Self-aligned dual-height isolation for bulk FinFET
IBM7 citations83
US9324790B2Apr 26, 2016
Self-aligned dual-height isolation for bulk FinFET
IBM4 citations72
US10643893B2May 5, 2020
Surface area and Schottky barrier height engineering for contact trench epitaxy
IBM0 citations52
US10643894B2May 5, 2020
Surface area and Schottky barrier height engineering for contact trench epitaxy
IBM0 citations52