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Inventor

BARRETT DONOVAN L

US13 patents
⚠️ This page may combine multiple inventors who share the name “BARRETT DONOVAN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NORTHROP GRUMMAN CORP

7 patents
US5611955AMar 18, 1997

High resistivity silicon carbide substrates for high power microwave devices

NORTHROP GRUMMAN CORP143 citations98
US5746827AMay 5, 1998

Method of producing large diameter silicon carbide crystals

NORTHROP GRUMMAN CORP57 citations94
US5683507ANov 4, 1997

Apparatus for growing large silicon carbide single crystals

NORTHROP GRUMMAN CORP62 citations94
US5788768AAug 4, 1998

Feedstock arrangement for silicon carbide boule growth

NORTHROP GRUMMAN CORP19 citations92
US5968261AOct 19, 1999

Method for growing large silicon carbide single crystals

NORTHROP GRUMMAN CORP42 citations91
US5895583AApr 20, 1999

Method of preparing silicon carbide wafers for epitaxial growth

NORTHROP GRUMMAN CORP52 citations88
US5937317AAug 10, 1999

Method of making a low resistivity silicon carbide boule

NORTHROP GRUMMAN CORP12 citations73

II VI INC

2 patents
US7608524B2Oct 27, 2009

Method of and system for forming SiC crystals having spatially uniform doping impurities

II VI INC22 citations91
US9388509B2Jul 12, 2016

Method for synthesizing ultrahigh-purity silicon carbide

II VI INC0 citations41

WESTINGHOUSE ELECTRIC CORP

2 patents
US4594173AJun 10, 1986

Indium doped gallium arsenide crystals and method of preparation

WESTINGHOUSE ELECTRIC CORP17 citations73
US5501173AMar 26, 1996

Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates

WESTINGHOUSE ELECTRIC CORP12 citations71

GUPTA AVINASH K

1 patent
US8216369B2Jul 10, 2012

System for forming SiC crystals having spatially uniform doping impurities

GUPTA AVINASH K18 citations90

ZWIEBACK ILYA

1 patent
US9017629B2Apr 28, 2015

Intra-cavity gettering of nitrogen in SiC crystal growth

ZWIEBACK ILYA6 citations71