Inventor
CHOE JOON-YONG
KR4 patents
Patents
4 patentsUS10886277B2Jan 5, 2021
Methods of manufacturing devices including a buried gate cell and a bit line structure including a thermal oxide buffer pattern
SAMSUNG ELECTRONICS CO LTD7 citations82
US11574912B2Feb 7, 2023
Memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12419040B2Sep 16, 2025
Semiconductor device with bit-line structure over cell region isolation film
SAMSUNG ELECTRONICS CO LTD0 citations60
US11778810B2Oct 3, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49