Inventor
LIN JYH-FENG
TW10 patents
⚠️ This page may combine multiple inventors who share the name “LIN JYH-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
8 patentsUS5956566ASep 21, 1999
Method and test site to monitor alignment shift and buried contact trench formation
TAIWAN SEMICONDUCTOR MFG36 citations91
US6040223AMar 21, 2000
Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits
TAIWAN SEMICONDUCTOR MFG41 citations87
US5915178AJun 22, 1999
Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region
TAIWAN SEMICONDUCTOR MFG26 citations86
US6613592B1Sep 2, 2003
IMD oxide crack monitor pattern and design rule
TAIWAN SEMICONDUCTOR MFG13 citations81
US5917215AJun 29, 1999
Stepped edge structure of an EEPROM tunneling window
TAIWAN SEMICONDUCTOR MFG13 citations71
US5895240AApr 20, 1999
Method of making stepped edge structure of an EEPROM tunneling window
TAIWAN SEMICONDUCTOR MFG13 citations71
US6369428B2Apr 9, 2002
Polysilicon load for 4T SRAM operating at cold temperatures
TAIWAN SEMICONDUCTOR MFG3 citations58
US6238993B1May 29, 2001
Polysilicon load for 4T SRAM operation at cold temperatures
TAIWAN SEMICONDUCTOR MFG0 citations47