Inventor

LIU PO-CHUN

TW87 patents

⚠️ This page may combine multiple inventors who share the name “LIU PO-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU PO-CHUN

TAIWAN SEMICONDUCTOR MFG CO LTD

Capping structure to reduce dark current in image sensors

Semiconductor structure having sets of III-V compound layers and method of forming the same

High electron mobility transistor and method of forming the same

Manufacturing method of semiconductor device

Semiconductor structure having sets of III-V compound layers and method of forming

Method for forming an image sensor

Semiconductor device having doped seed layer and method of manufacturing the same

Semiconductor device, transistor having doped seed layer and method of manufacturing the same

Dielectric sidewall structure for quality improvement in Ge and SiGe devices

Superlattice buffer structure for gallium nitride transistors

High electron mobility transistor and method of forming the same

Method of manufacturing a semiconductor device including a barrier structure

High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same

High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same

Sensor device and method for forming the same

Capping structure to reduce dark current in image sensors

Dielectric sidewall structure for quality improvement in Ge and SiGe devices

Capping structure to reduce dark current in image sensors

Dielectric sidewall structure for quality improvement in Ge and SiGe devices

Semiconductor device having doped seed layer and method of manufacturing the same

Semiconductor structure having sets of III-V compound layers and method of forming

High electron mobility transistors

Dielectric sidewall structure for quality improvement in GE and SIGE devices

High electron mobility transistors

High electron mobility transistors

Source/drains in semiconductor devices and methods of forming thereof

Source/drains in semiconductor devices and methods of forming thereof

Method for forming an image sensor

Passivation layer for epitaxial semiconductor process

TAIWAN SEMICONDUCTOR MFG

Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing

High electron mobility transistor and method of forming the same

High electron mobility transistor with indium nitride layer

Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing

Method of forming a high electron mobility transistor

Transistor having an ohmic contact by screen layer and method of making the same

High electron mobility transistor and method of forming the same

Transistor having doped substrate and method of making the same

Transistor having high breakdown voltage and method of making the same

Semiconductor device

Transistor having an ohmic contact by gradient layer and method of making the same

High electron mobility transistor and method of forming the same

Thick AlN inter-layer for III-nitride layer on silicon substrate

CHEN CHI-MING

Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrate

Semiconductor structure having sets of III-V compound layers and method of forming the same

III-nitride growth method on silicon substrate

EPISTAR CORP

Light emitter with a voltage dependent resistor layer

CHIANG CHEN-HAO

High electron mobility transistor and method of forming the same

LEE PIN HSING

Hand washing station

IND TECH RES INST

Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate

HONG RUEI HONG

Water flow and water flow control device having display screen with transitional graphical user interface