Inventor

BYUN KYUNG-EUN

KR57 patents

Patents

50 patents

US11682622B2Jun 20, 2023

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD5 citations86

US9306005B2Apr 5, 2016

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US11069619B2Jul 20, 2021

Interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD3 citations73

US10971451B2Apr 6, 2021

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US10587207B2Mar 10, 2020

Triboelectric generator using surface plasmon resonance

SAMSUNG ELECTRONICS CO LTD5 citations73

US10014799B2Jul 3, 2018

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD5 citations73

US10850985B2Dec 1, 2020

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD3 citations72

US9752941B2Sep 5, 2017

Pressure sensor and pressure sensing method

SAMSUNG ELECTRONICS CO LTD5 citations71

US11708633B2Jul 25, 2023

Metal chalcogenide film and method and device for manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations69

US9166062B2Oct 20, 2015

Field effect transistor using graphene

SAMSUNG ELECTRONICS CO LTD2 citations63

US9048310B2Jun 2, 2015

Graphene switching device having tunable barrier

SAMSUNG ELECTRONICS CO LTD2 citations63

US12593449B2Mar 31, 2026

Vertical nonvolatile memory device including gate electrodes with metal-doped graphene

SAMSUNG ELECTRONICS CO LTD0 citations62

US12506074B2Dec 23, 2025

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12389630B2Aug 12, 2025

Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern

SAMSUNG ELECTRONICS CO LTD0 citations62

US12378120B2Aug 5, 2025

Wiring including graphene layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12369359B2Jul 22, 2025

Thin film structure and electronic device including two-dimensional material

SAMSUNG ELECTRONICS CO LTD0 citations62

US12359911B2Jul 15, 2025

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

SAMSUNG ELECTRONICS CO LTD0 citations62

US12341063B2Jun 24, 2025

Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12262527B2Mar 25, 2025

Vertical-channel cell array transistor structure and dram device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12217958B2Feb 4, 2025

Method of pre-treating substrate and method of directly forming graphene using the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12183780B2Dec 31, 2024

Metal-to-semiconductor contact including a 2D crystal material layer

SAMSUNG ELECTRONICS CO LTD0 citations62

US12183783B2Dec 31, 2024

Stacked structure including two-dimensional material and method of fabricating the stacked structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12080595B2Sep 3, 2024

Method of forming interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12046656B2Jul 23, 2024

Semiconductor device including surface-treated semiconductor layer

SAMSUNG ELECTRONICS CO LTD0 citations62

US11906291B2Feb 20, 2024

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

SAMSUNG ELECTRONICS CO LTD0 citations62

US11713248B2Aug 1, 2023

Method of growing graphene selectively

SAMSUNG ELECTRONICS CO LTD0 citations62

US11626502B2Apr 11, 2023

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD1 citations62

US11094538B2Aug 17, 2021

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD1 citations62

US9306021B2Apr 5, 2016

Graphene devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62

US12421598B2Sep 23, 2025

Nanocrystalline graphene and method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD0 citations61

US12400975B2Aug 26, 2025

Interconnect structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations61

US12080649B2Sep 3, 2024

Semiconductor memory device and apparatus including the same

SAMSUNG ELECTRONICS CO LTD1 citations61

US11424186B2Aug 23, 2022

Semiconductor memory device and apparatus including the same

SAMSUNG ELECTRONICS CO LTD0 citations61

US12575136B2Mar 10, 2026

Transistor

SAMSUNG ELECTRONICS CO LTD0 citations60

US12336259B2Jun 17, 2025

Electronic device including two-dimensional material and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations60

US11887849B2Jan 30, 2024

Method of forming transition metal dichalcogenidethin film and method of manufacturing electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations60

US11869768B2Jan 9, 2024

Method of forming transition metal dichalcogenide thin film

SAMSUNG ELECTRONICS CO LTD0 citations60

US11545358B2Jan 3, 2023

Method of forming transition metal dichalcogenide thin film

SAMSUNG ELECTRONICS CO LTD1 citations60

US12334357B2Jun 17, 2025

Method of forming material layer

SAMSUNG ELECTRONICS CO LTD0 citations59

US12297532B2May 13, 2025

Metal chalcogenide film and method and device for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations59

US11881399B2Jan 23, 2024

Method of forming transition metal dichalcogenide thin film

SAMSUNG ELECTRONICS CO LTD0 citations59

US11476117B2Oct 18, 2022

Method of forming transition metal dichalcogenide thin film

SAMSUNG ELECTRONICS CO LTD0 citations59

US11538810B2Dec 27, 2022

Wiring structures, methods of forming the same, and semiconductor devices including the same

SAMSUNG ELECTRONICS CO LTD0 citations55

US11975971B2May 7, 2024

Methods of forming graphene and graphene manufacturing apparatuses

SAMSUNG ELECTRONICS CO LTD0 citations52

US11572278B2Feb 7, 2023

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD0 citations52

Showing the top 50 of 57 patents by PatentIndex Score.

BYUN KYUNG-EUN

Patents

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Electronic device including graphene

Tunneling field-effect transistor including graphene channel

Methods of preparing graphene and device including graphene

Field effect transistor using graphene

Graphene structure and method of forming graphene structure

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Interconnect structure and electronic device employing the same

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Triboelectric generator using surface plasmon resonance

Triboelectric generator

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

Pressure sensor and pressure sensing method

Metal chalcogenide film and method and device for manufacturing the same

Field effect transistor using graphene

Graphene switching device having tunable barrier

Vertical nonvolatile memory device including gate electrodes with metal-doped graphene

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern

Wiring including graphene layer and method of manufacturing the same

Thin film structure and electronic device including two-dimensional material

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure

Vertical-channel cell array transistor structure and dram device including the same

Method of pre-treating substrate and method of directly forming graphene using the same

Metal-to-semiconductor contact including a 2D crystal material layer

Stacked structure including two-dimensional material and method of fabricating the stacked structure

Method of forming interconnect structure

Semiconductor device including surface-treated semiconductor layer

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

Method of growing graphene selectively

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

Method of forming graphene

Graphene devices and methods of fabricating the same

Nanocrystalline graphene and method of forming nanocrystalline graphene

Interconnect structure and electronic device including the same

Semiconductor memory device and apparatus including the same

Semiconductor memory device and apparatus including the same

Transistor

Electronic device including two-dimensional material and method of fabricating the same

Method of forming transition metal dichalcogenidethin film and method of manufacturing electronic device including the same

Method of forming transition metal dichalcogenide thin film

Method of forming transition metal dichalcogenide thin film

Method of forming material layer

Metal chalcogenide film and method and device for manufacturing the same

Method of forming transition metal dichalcogenide thin film

Method of forming transition metal dichalcogenide thin film

Wiring structures, methods of forming the same, and semiconductor devices including the same

Methods of forming graphene and graphene manufacturing apparatuses

Method of forming graphene