Inventor

CHO YEONCHOO

KR45 patents

Patents

45 patents

US11682622B2Jun 20, 2023

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD5 citations86

US11588034B2Feb 21, 2023

Field effect transistor including gate insulating layer formed of two-dimensional material

SAMSUNG ELECTRONICS CO LTD4 citations74

US11217531B2Jan 4, 2022

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US11088077B2Aug 10, 2021

Layer structure including diffusion barrier layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73

US11069619B2Jul 20, 2021

Interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD3 citations73

US10971451B2Apr 6, 2021

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US10684560B2Jun 16, 2020

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD6 citations73

US10229881B2Mar 12, 2019

Layer structure including diffusion barrier layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations73

US10217513B2Feb 26, 2019

Phase change memory devices including two-dimensional material and methods of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations73

US10134628B2Nov 20, 2018

Multilayer structure including diffusion barrier layer and device including the multilayer structure

SAMSUNG ELECTRONICS CO LTD4 citations73

US10850985B2Dec 1, 2020

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD3 citations72

US12506074B2Dec 23, 2025

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12408399B2Sep 2, 2025

Semiconductor device including two-dimensional semiconductor material

SAMSUNG ELECTRONICS CO LTD0 citations62

US12359911B2Jul 15, 2025

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

SAMSUNG ELECTRONICS CO LTD0 citations62

US12255244B2Mar 18, 2025

Field effect transistor including gate insulating layer formed of two-dimensional material

SAMSUNG ELECTRONICS CO LTD0 citations62

US12217958B2Feb 4, 2025

Method of pre-treating substrate and method of directly forming graphene using the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12183780B2Dec 31, 2024

Semiconductor device including graphene and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62

US12002882B2Jun 4, 2024

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11906291B2Feb 20, 2024

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

SAMSUNG ELECTRONICS CO LTD0 citations62

US11764156B2Sep 19, 2023

Layer structure including diffusion barrier layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11626502B2Apr 11, 2023

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD1 citations62

US11563116B2Jan 24, 2023

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US11532709B2Dec 20, 2022

Field effect transistor including channel formed of 2D material

SAMSUNG ELECTRONICS CO LTD1 citations62

US11508815B2Nov 22, 2022

Semiconductor device including two-dimensional semiconductor material

SAMSUNG ELECTRONICS CO LTD0 citations62

US11086223B2Aug 10, 2021

Hardmask composition and method of forming pattern using the hardmask composition

SAMSUNG ELECTRONICS CO LTD1 citations62

US10495972B2Dec 3, 2019

Hardmask composition and method of forming pattern using the hardmask composition

SAMSUNG ELECTRONICS CO LTD1 citations62

US10199469B2Feb 5, 2019

Semiconductor device including metal-semiconductor junction

SAMSUNG ELECTRONICS CO LTD1 citations62

US12421598B2Sep 23, 2025

Nanocrystalline graphene and method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD0 citations61

US12103850B2Oct 1, 2024

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD0 citations61

US11881399B2Jan 23, 2024

Method of forming transition metal dichalcogenide thin film

SAMSUNG ELECTRONICS CO LTD0 citations59

US11476117B2Oct 18, 2022

Method of forming transition metal dichalcogenide thin film

SAMSUNG ELECTRONICS CO LTD0 citations59

US11985910B2May 14, 2024

Memristor and neuromorphic device comprising the same

SAMSUNG ELECTRONICS CO LTD0 citations58

US11374171B2Jun 28, 2022

Memristor and neuromorphic device comprising the same

SAMSUNG ELECTRONICS CO LTD0 citations58

US11572278B2Feb 7, 2023

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD0 citations52

US10790230B2Sep 29, 2020

Layer structure including diffusion barrier layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US10727182B2Jul 28, 2020

Layer structure including diffusion barrier layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US10133176B2Nov 20, 2018

Hardmask composition and method of forming pattern using the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US9721943B2Aug 1, 2017

Wiring structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US11149346B2Oct 19, 2021

Method of directly growing carbon material on substrate

SAMSUNG ELECTRONICS CO LTD0 citations50

US11961898B2Apr 16, 2024

Method of patterning two-dimensional material layer on substrate, and method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations49

US10840338B2Nov 17, 2020

Semiconductor device including graphene and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations42

CHO YEONCHOO

Patents

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Field effect transistor including gate insulating layer formed of two-dimensional material

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Layer structure including diffusion barrier layer and method of manufacturing the same

Interconnect structure and electronic device employing the same

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Layer structure including diffusion barrier layer and method of manufacturing the same

Phase change memory devices including two-dimensional material and methods of operating the same

Multilayer structure including diffusion barrier layer and device including the multilayer structure

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

Semiconductor device including two-dimensional semiconductor material

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

Field effect transistor including gate insulating layer formed of two-dimensional material

Method of pre-treating substrate and method of directly forming graphene using the same

Metal-to-semiconductor contact including a 2D crystal material layer

Semiconductor device including two-dimensional semiconductor material

Semiconductor device including surface-treated semiconductor layer

Field effect transistor including channel formed of 2D material

Semiconductor device including graphene and method of manufacturing the semiconductor device

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

Layer structure including diffusion barrier layer and method of manufacturing the same

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

Field effect transistor including channel formed of 2D material

Semiconductor device including two-dimensional semiconductor material

Hardmask composition and method of forming pattern using the hardmask composition

Hardmask composition and method of forming pattern using the hardmask composition

Semiconductor device including metal-semiconductor junction

Nanocrystalline graphene and method of forming nanocrystalline graphene

Method of forming graphene

Method of forming transition metal dichalcogenide thin film

Method of forming transition metal dichalcogenide thin film

Memristor and neuromorphic device comprising the same

Memristor and neuromorphic device comprising the same

Method of forming graphene

Layer structure including diffusion barrier layer and method of manufacturing the same

Layer structure including diffusion barrier layer and method of manufacturing the same

Hardmask composition and method of forming pattern using the same

Wiring structure and electronic device including the same

Method of directly growing carbon material on substrate

Method of patterning two-dimensional material layer on substrate, and method of fabricating semiconductor device

Semiconductor device including graphene and method of manufacturing the semiconductor device