Inventor
YANG JEN-SHENG
TW32 patents
⚠️ This page may combine multiple inventors who share the name “YANG JEN-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
29 patentsUS9461245B1Oct 4, 2016
Bottom electrode for RRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD55 citations98
US9577009B1Feb 21, 2017
RRAM cell with PMOS access transistor
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US9553265B1Jan 24, 2017
RRAM device with data storage layer having increased height
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations94
US10249756B2Apr 2, 2019
Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10163981B2Dec 25, 2018
Metal landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10109793B2Oct 23, 2018
Bottom electrode for RRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10566519B2Feb 18, 2020
Method for forming a flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11094744B2Aug 17, 2021
Interconnect landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11004975B2May 11, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10903274B2Jan 26, 2021
Interconnect landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10566387B2Feb 18, 2020
Interconnect landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10158072B1Dec 18, 2018
Step height reduction of memory element
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9941470B2Apr 10, 2018
RRAM device with data storage layer having increased height
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9773552B2Sep 26, 2017
RRAM cell with PMOS access transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11751485B2Sep 5, 2023
Flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10796759B2Oct 6, 2020
Method and apparatus for reading RRAM cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10388531B2Aug 20, 2019
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10311952B2Jun 4, 2019
Method and apparatus for reading RRAM cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9934853B2Apr 3, 2018
Method and apparatus for reading RRAM cell
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11889705B2Jan 30, 2024
Interconnect landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11844286B2Dec 12, 2023
Flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11201281B2Dec 14, 2021
Method for forming a flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094545B2Aug 17, 2021
Self-aligned insulated film for high-K metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11678592B2Jun 13, 2023
Step height mitigation in resistive random access memory structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11038108B2Jun 15, 2021
Step height mitigation in resistive random access memory structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10727337B2Jul 28, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164185B2Dec 25, 2018
RRAM cell with PMOS access transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10763426B2Sep 1, 2020
Method for forming a flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9779947B2Oct 3, 2017
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51