Inventor
FANG SUNFEI
US40 patents
⚠️ This page may combine multiple inventors who share the name “FANG SUNFEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
29 patentsUS7151023B1Dec 19, 2006
Metal gate MOSFET by full semiconductor metal alloy conversion
IBM80 citations97
US7482215B2Jan 27, 2009
Self-aligned dual segment liner and method of manufacturing the same
IBM20 citations92
US7271455B2Sep 18, 2007
Formation of fully silicided metal gate using dual self-aligned silicide process
IBM20 citations92
US7122472B2Oct 17, 2006
Method for forming self-aligned dual fully silicided gates in CMOS devices
IBM23 citations92
US7067368B1Jun 27, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM17 citations92
US7785950B2Aug 31, 2010
Dual stress memory technique method and related structure
IBM9 citations84
US7582516B2Sep 1, 2009
CMOS devices with hybrid channel orientations, and methods for fabricating the same using faceted epitaxy
IBM10 citations84
US7488660B2Feb 10, 2009
Extended raised source/drain structure for enhanced contact area and method for forming extended raised source/drain structure
IBM13 citations84
US6916729B2Jul 12, 2005
Salicide formation method
IBM16 citations83
US8039382B2Oct 18, 2011
Method for forming self-aligned metal silicide contacts
IBM6 citations74
US7618891B2Nov 17, 2009
Method for forming self-aligned metal silicide contacts
IBM6 citations74
US7517767B2Apr 14, 2009
Forming conductive stud for semiconductive devices
IBM6 citations74
US7220662B2May 22, 2007
Fully silicided field effect transistors
IBM7 citations74
US7112481B2Sep 26, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM5 citations74
US7105440B2Sep 12, 2006
Self-forming metal silicide gate for CMOS devices
IBM9 citations74
US7999332B2Aug 16, 2011
Asymmetric semiconductor devices and method of fabricating
IBM5 citations63
US7598572B2Oct 6, 2009
Silicided polysilicon spacer for enhanced contact area
IBM4 citations63
US7309901B2Dec 18, 2007
Field effect transistors (FETs) with multiple and/or staircase silicide
IBM5 citations63
US7064025B1Jun 20, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM4 citations63
US7785999B2Aug 31, 2010
Formation of fully silicided metal gate using dual self-aligned silicide process
IBM3 citations62
US7393746B2Jul 1, 2008
Post-silicide spacer removal
IBM6 citations62
US7585773B2Sep 8, 2009
Non-conformal stress liner for enhanced MOSFET performance
IBM3 citations61
US7863693B2Jan 4, 2011
Forming conductive stud for semiconductive devices
IBM0 citations52
US7816219B2Oct 19, 2010
Field effect transistors (FETs) with multiple and/or staircase silicide
IBM1 citations52
US7504309B2Mar 17, 2009
Pre-silicide spacer removal
IBM0 citations52
US8039331B2Oct 18, 2011
Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors
IBM0 citations51
US7410852B2Aug 12, 2008
Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
IBM0 citations51
US7223691B2May 29, 2007
Method of forming low resistance and reliable via in inter-level dielectric interconnect
IBM0 citations48
US8866261B2Oct 21, 2014
Self-aligned silicide bottom plate for eDRAM applications by self-diffusing metal in CVD/ALD metal process
IBM0 citations42
SAMSUNG ELECTRONICS CO LTD
3 patentsUS7923365B2Apr 12, 2011
Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon
SAMSUNG ELECTRONICS CO LTD4 citations62
US7541288B2Jun 2, 2009
Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques
SAMSUNG ELECTRONICS CO LTD2 citations62
US7317204B2Jan 8, 2008
Test structure of semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations60
FANG SUNFEI
3 patentsUS8173531B2May 8, 2012
Structure and method to improve threshold voltage of MOSFETS including a high K dielectric
FANG SUNFEI3 citations61
US8679938B2Mar 25, 2014
Shallow trench isolation for device including deep trench capacitors
FANG SUNFEI2 citations60
US8513085B2Aug 20, 2013
Structure and method to improve threshold voltage of MOSFETs including a high k dielectric
FANG SUNFEI0 citations50
CHIDAMBARRAO DURESETI
2 patentsUS8629022B2Jan 14, 2014
Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same
CHIDAMBARRAO DURESETI18 citations92
US8445974B2May 21, 2013
Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same
CHIDAMBARRAO DURESETI7 citations84