P

Inventor

FANG SUNFEI

US40 patents
⚠️ This page may combine multiple inventors who share the name “FANG SUNFEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

29 patents
US7151023B1Dec 19, 2006

Metal gate MOSFET by full semiconductor metal alloy conversion

IBM80 citations97
US7482215B2Jan 27, 2009

Self-aligned dual segment liner and method of manufacturing the same

IBM20 citations92
US7271455B2Sep 18, 2007

Formation of fully silicided metal gate using dual self-aligned silicide process

IBM20 citations92
US7122472B2Oct 17, 2006

Method for forming self-aligned dual fully silicided gates in CMOS devices

IBM23 citations92
US7067368B1Jun 27, 2006

Method for forming self-aligned dual salicide in CMOS technologies

IBM17 citations92
US7785950B2Aug 31, 2010

Dual stress memory technique method and related structure

IBM9 citations84
US7582516B2Sep 1, 2009

CMOS devices with hybrid channel orientations, and methods for fabricating the same using faceted epitaxy

IBM10 citations84
US7488660B2Feb 10, 2009

Extended raised source/drain structure for enhanced contact area and method for forming extended raised source/drain structure

IBM13 citations84
US6916729B2Jul 12, 2005

Salicide formation method

IBM16 citations83
US8039382B2Oct 18, 2011

Method for forming self-aligned metal silicide contacts

IBM6 citations74
US7618891B2Nov 17, 2009

Method for forming self-aligned metal silicide contacts

IBM6 citations74
US7517767B2Apr 14, 2009

Forming conductive stud for semiconductive devices

IBM6 citations74
US7220662B2May 22, 2007

Fully silicided field effect transistors

IBM7 citations74
US7112481B2Sep 26, 2006

Method for forming self-aligned dual salicide in CMOS technologies

IBM5 citations74
US7105440B2Sep 12, 2006

Self-forming metal silicide gate for CMOS devices

IBM9 citations74
US7999332B2Aug 16, 2011

Asymmetric semiconductor devices and method of fabricating

IBM5 citations63
US7598572B2Oct 6, 2009

Silicided polysilicon spacer for enhanced contact area

IBM4 citations63
US7309901B2Dec 18, 2007

Field effect transistors (FETs) with multiple and/or staircase silicide

IBM5 citations63
US7064025B1Jun 20, 2006

Method for forming self-aligned dual salicide in CMOS technologies

IBM4 citations63
US7785999B2Aug 31, 2010

Formation of fully silicided metal gate using dual self-aligned silicide process

IBM3 citations62
US7393746B2Jul 1, 2008

Post-silicide spacer removal

IBM6 citations62
US7585773B2Sep 8, 2009

Non-conformal stress liner for enhanced MOSFET performance

IBM3 citations61
US7863693B2Jan 4, 2011

Forming conductive stud for semiconductive devices

IBM0 citations52
US7816219B2Oct 19, 2010

Field effect transistors (FETs) with multiple and/or staircase silicide

IBM1 citations52
US7504309B2Mar 17, 2009

Pre-silicide spacer removal

IBM0 citations52
US8039331B2Oct 18, 2011

Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors

IBM0 citations51
US7410852B2Aug 12, 2008

Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors

IBM0 citations51
US7223691B2May 29, 2007

Method of forming low resistance and reliable via in inter-level dielectric interconnect

IBM0 citations48
US8866261B2Oct 21, 2014

Self-aligned silicide bottom plate for eDRAM applications by self-diffusing metal in CVD/ALD metal process

IBM0 citations42

SAMSUNG ELECTRONICS CO LTD

3 patents

FANG SUNFEI

3 patents

CHIDAMBARRAO DURESETI

2 patents

INFINEON TECHNOLOGIES AG

2 patents

INFINEON TECHNOLOGIES CORP

1 patent