Inventor

NAGAOKA HIROBUMI

JP6 patents

⚠️ This page may combine multiple inventors who share the name “NAGAOKA HIROBUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI CHEM CORP

4 patents

US9518337B2Dec 13, 2016

KIYOMI KAZUMASA

1 patent

US8142566B2Mar 27, 2012

Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate

KIYOMI KAZUMASA35 citations85

UNIV TOHOKU

1 patent

US7794541B2Sep 14, 2010

Gallium nitride-based material and method of manufacturing the same

UNIV TOHOKU7 citations69

NAGAOKA HIROBUMI

MITSUBISHI CHEM CORP

Method for producing nitride crystal and nitride crystal

Method for producing nitride crystal and nitride crystal

Method for producing nitride crystal and nitride crystal

Method for producing nitride crystal and nitride crystal

KIYOMI KAZUMASA

Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0&lt;=x&lt;=1, 0&lt;=y&lt;1, 0&lt;z&lt;=1, 0&lt;s&lt;=1 and 0&lt;=t&lt;1) on a substrate

UNIV TOHOKU

Gallium nitride-based material and method of manufacturing the same

Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate