Inventor
WANN CLEMENT H
US15 patents
⚠️ This page may combine multiple inventors who share the name “WANN CLEMENT H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
12 patentsUS7791109B2Sep 7, 2010
Metal silicide alloy local interconnect
IBM109 citations97
US7271455B2Sep 18, 2007
Formation of fully silicided metal gate using dual self-aligned silicide process
IBM20 citations92
US7122472B2Oct 17, 2006
Method for forming self-aligned dual fully silicided gates in CMOS devices
IBM23 citations92
US7098536B2Aug 29, 2006
Structure for strained channel field effect transistor pair having a member and a contact via
IBM31 citations92
US7067368B1Jun 27, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM17 citations92
US7112481B2Sep 26, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM5 citations74
US7064025B1Jun 20, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM4 citations63
US7785999B2Aug 31, 2010
Formation of fully silicided metal gate using dual self-aligned silicide process
IBM3 citations62
US7494915B2Feb 24, 2009
Back end interconnect with a shaped interface
IBM0 citations52
US7282435B2Oct 16, 2007
Method of forming contact for dual liner product
IBM0 citations52
US8039331B2Oct 18, 2011
Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors
IBM0 citations51
US7410852B2Aug 12, 2008
Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
IBM0 citations51