Inventor
SHIN SOO-HO
KR31 patents
⚠️ This page may combine multiple inventors who share the name “SHIN SOO-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS9177891B2Nov 3, 2015
Semiconductor device including contact pads
SAMSUNG ELECTRONICS CO LTD12 citations84
US7413943B2Aug 19, 2008
Method of fabricating gate of fin type transistor
SAMSUNG ELECTRONICS CO LTD14 citations84
US7154144B2Dec 26, 2006
Self-aligned inner gate recess channel transistor and method of forming the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US6531758B2Mar 11, 2003
Semiconductor integrated circuit with resistor and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD13 citations84
US12016176B2Jun 18, 2024
Semiconductor memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations74
US7670910B2Mar 2, 2010
Method of forming self-aligned inner gate recess channel transistor
SAMSUNG ELECTRONICS CO LTD7 citations74
US6656791B2Dec 2, 2003
Semiconductor integrated circuit with resistor and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD10 citations74
US7598571B2Oct 6, 2009
Semiconductor device having vertical channels and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations70
US9496336B2Nov 15, 2016
Semiconductor device having vertical channels and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9099325B2Aug 4, 2015
Semiconductor device having vertical channels and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7767531B2Aug 3, 2010
Method of forming transistor having channel region at sidewall of channel portion hole
SAMSUNG ELECTRONICS CO LTD5 citations63
US7531413B2May 12, 2009
Method of forming transistor having channel region at sidewall of channel portion hole
SAMSUNG ELECTRONICS CO LTD3 citations63
US7749846B2Jul 6, 2010
Method of forming contact structure and method of fabricating semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7745876B2Jun 29, 2010
Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7595529B2Sep 29, 2009
Semiconductor integrated circuit devices having upper pattern aligned with lower pattern molded by semiconductor substrate and methods of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US12464709B2Nov 4, 2025
Semiconductor memory device with buried contacts and a fence
SAMSUNG ELECTRONICS CO LTD0 citations60
US11832442B2Nov 28, 2023
Semiconductor memory device with buried contacts and a fence
SAMSUNG ELECTRONICS CO LTD0 citations60
US9966267B2May 8, 2018
Semiconductor device having vertical channels and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9536868B2Jan 3, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9299827B2Mar 29, 2016
Semiconductor integrated circuit devices including gates having connection lines thereon
SAMSUNG ELECTRONICS CO LTD0 citations52
US7279741B2Oct 9, 2007
Semiconductor device with increased effective channel length and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US6720276B2Apr 13, 2004
Methods of forming spin on glass layers by curing remaining portions thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US8873277B2Oct 28, 2014
Semiconductor memory device having balancing capacitors
SAMSUNG ELECTRONICS CO LTD0 citations51
US7629215B2Dec 8, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations50
US7300888B2Nov 27, 2007
Methods of manufacturing integrated circuit devices having an encapsulated insulation layer
SAMSUNG ELECTRONICS CO LTD0 citations42
KIM YONG-SUNG
3 patentsUS8563373B2Oct 22, 2013
Semiconductor device having vertical channels and method of manufacturing the same
KIM YONG-SUNG5 citations84
US8637934B2Jan 28, 2014
Semiconductor device having vertical channels and method of manufacturing the same
KIM YONG-SUNG2 citations62
US8183113B2May 22, 2012
Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures
KIM YONG-SUNG0 citations52