P

Inventor

CHUNG TAE-YOUNG

KR79 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG TAE-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

43 patents
US6204161B1Mar 20, 2001

Self aligned contact pad in a semiconductor device and method for forming the same

SAMSUNG ELECTRONICS CO LTD58 citations96
US5422295AJun 6, 1995

Method for forming a semiconductor memory device having a vertical multi-layered storage electrode

SAMSUNG ELECTRONICS CO LTD100 citations96
US6613621B2Sep 2, 2003

Methods of forming self-aligned contact pads using a damascene gate process

SAMSUNG ELECTRONICS CO LTD71 citations94
US6242332B1Jun 5, 2001

Method for forming self-aligned contact

SAMSUNG ELECTRONICS CO LTD26 citations93
US7056786B2Jun 6, 2006

Self-aligned buried contact pair and method of forming the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US6479343B1Nov 12, 2002

DRAM cell capacitor and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD26 citations92
US6403431B1Jun 11, 2002

Method of forming in an insulating layer a trench that exceeds the photolithographic resolution limits

SAMSUNG ELECTRONICS CO LTD21 citations92
US6218296B1Apr 17, 2001

Semiconductor device with pillar-shaped capacitor storage node and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations92
US8826747B2Sep 9, 2014

Flexible tactile sensor apparatus

SAMSUNG ELECTRONICS CO LTD20 citations89
US7655522B2Feb 2, 2010

Metal oxide semiconductor (MOS) transistor having a recessed gate electrode and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7413943B2Aug 19, 2008

Method of fabricating gate of fin type transistor

SAMSUNG ELECTRONICS CO LTD14 citations84
US7326613B2Feb 5, 2008

Methods of manufacturing semiconductor devices having elongated contact plugs

SAMSUNG ELECTRONICS CO LTD9 citations84
US7205232B2Apr 17, 2007

Method of forming a self-aligned contact structure using a sacrificial mask layer

SAMSUNG ELECTRONICS CO LTD13 citations84
US7154144B2Dec 26, 2006

Self-aligned inner gate recess channel transistor and method of forming the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US7056828B2Jun 6, 2006

Sidewall spacer structure for self-aligned contact and method for forming the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US6967150B2Nov 22, 2005

Method of forming self-aligned contact in fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD16 citations84
US7923331B2Apr 12, 2011

Method of fabricating recess channel transistor having locally thick dielectrics and related devices

SAMSUNG ELECTRONICS CO LTD10 citations83
US7329918B2Feb 12, 2008

Semiconductor memory device including storage nodes and resistors and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations83
US6890841B2May 10, 2005

Methods of forming integrated circuit memory devices that include a plurality of landing pad holes that are arranged in a staggered pattern and integrated circuit memory devices formed thereby

SAMSUNG ELECTRONICS CO LTD14 citations83
US5378908AJan 3, 1995

Stack capacitor DRAM cell having increased capacitor area

SAMSUNG ELECTRONICS CO LTD15 citations82
US5120674AJun 9, 1992

Method of making stacked capacitor dram cell

SAMSUNG ELECTRONICS CO LTD19 citations82
US7670910B2Mar 2, 2010

Method of forming self-aligned inner gate recess channel transistor

SAMSUNG ELECTRONICS CO LTD7 citations74
US7666743B2Feb 23, 2010

Methods of fabricating semiconductor devices including transistors having recessed channels

SAMSUNG ELECTRONICS CO LTD7 citations74
US7388243B2Jun 17, 2008

Self-Aligned buried contact pair

SAMSUNG ELECTRONICS CO LTD8 citations74
US7180118B2Feb 20, 2007

Semiconductor device including storage node and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7049203B2May 23, 2006

Semiconductor device having a capacitor and method of fabricating same

SAMSUNG ELECTRONICS CO LTD10 citations74
US6458680B2Oct 1, 2002

Method of fabricating contact pads of a semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations74
US6288446B2Sep 11, 2001

Semiconductor device with pillar-shaped capacitor storage node

SAMSUNG ELECTRONICS CO LTD5 citations74
US5766970AJun 16, 1998

Method of manufacturing a twin well semiconductor device with improved planarity

SAMSUNG ELECTRONICS CO LTD7 citations74
US6670663B2Dec 30, 2003

DRAM cell capacitor and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD10 citations73
US6277702B1Aug 21, 2001

Capacitor of a semiconductor device and a method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations73
US6229171B1May 8, 2001

Storage element for semiconductor capacitor

SAMSUNG ELECTRONICS CO LTD10 citations73
US7074667B2Jul 11, 2006

Semiconductor memory device including storage nodes and resistors and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations72
US9568379B2Feb 14, 2017

Apparatus and method for measuring tactile information

SAMSUNG ELECTRONICS CO LTD3 citations70
US9496336B2Nov 15, 2016

Semiconductor device having vertical channels and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US9099325B2Aug 4, 2015

Semiconductor device having vertical channels and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US8039876B2Oct 18, 2011

Metal oxide semiconductor (MOS) transistors having a recessed gate electrode

SAMSUNG ELECTRONICS CO LTD2 citations63
US7547938B2Jun 16, 2009

Semiconductor devices having elongated contact plugs

SAMSUNG ELECTRONICS CO LTD3 citations63
US7492004B2Feb 17, 2009

Transistors having a channel region between channel-portion holes and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7488654B2Feb 10, 2009

Fabrication of local damascene finFETs using contact type nitride damascene mask

SAMSUNG ELECTRONICS CO LTD2 citations63
US7476585B2Jan 13, 2009

Semiconductor device including storage node and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7368778B2May 6, 2008

DRAM having at least three layered impurity regions between channel holes and method of fabricating same

SAMSUNG ELECTRONICS CO LTD4 citations63
USRE36261EAug 3, 1999

Stack capacitor DRAM cell having increased capacitor area

SAMSUNG ELECTRONICS CO LTD2 citations63

HYUNDAI MOTOR CO LTD

5 patents

KIM YONG-SUNG

1 patent

CJ LOGISTICS CORP

1 patent

Showing the top 50 of 79 patents by PatentIndex Score.