Inventor
CHUNG TAE-YOUNG
KR79 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG TAE-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
43 patentsUS6204161B1Mar 20, 2001
Self aligned contact pad in a semiconductor device and method for forming the same
SAMSUNG ELECTRONICS CO LTD58 citations96
US5422295AJun 6, 1995
Method for forming a semiconductor memory device having a vertical multi-layered storage electrode
SAMSUNG ELECTRONICS CO LTD100 citations96
US6613621B2Sep 2, 2003
Methods of forming self-aligned contact pads using a damascene gate process
SAMSUNG ELECTRONICS CO LTD71 citations94
US6242332B1Jun 5, 2001
Method for forming self-aligned contact
SAMSUNG ELECTRONICS CO LTD26 citations93
US7056786B2Jun 6, 2006
Self-aligned buried contact pair and method of forming the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US6479343B1Nov 12, 2002
DRAM cell capacitor and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD26 citations92
US6403431B1Jun 11, 2002
Method of forming in an insulating layer a trench that exceeds the photolithographic resolution limits
SAMSUNG ELECTRONICS CO LTD21 citations92
US6218296B1Apr 17, 2001
Semiconductor device with pillar-shaped capacitor storage node and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations92
US8826747B2Sep 9, 2014
Flexible tactile sensor apparatus
SAMSUNG ELECTRONICS CO LTD20 citations89
US7655522B2Feb 2, 2010
Metal oxide semiconductor (MOS) transistor having a recessed gate electrode and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7413943B2Aug 19, 2008
Method of fabricating gate of fin type transistor
SAMSUNG ELECTRONICS CO LTD14 citations84
US7326613B2Feb 5, 2008
Methods of manufacturing semiconductor devices having elongated contact plugs
SAMSUNG ELECTRONICS CO LTD9 citations84
US7205232B2Apr 17, 2007
Method of forming a self-aligned contact structure using a sacrificial mask layer
SAMSUNG ELECTRONICS CO LTD13 citations84
US7154144B2Dec 26, 2006
Self-aligned inner gate recess channel transistor and method of forming the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US7056828B2Jun 6, 2006
Sidewall spacer structure for self-aligned contact and method for forming the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6967150B2Nov 22, 2005
Method of forming self-aligned contact in fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD16 citations84
US7923331B2Apr 12, 2011
Method of fabricating recess channel transistor having locally thick dielectrics and related devices
SAMSUNG ELECTRONICS CO LTD10 citations83
US7329918B2Feb 12, 2008
Semiconductor memory device including storage nodes and resistors and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US6890841B2May 10, 2005
Methods of forming integrated circuit memory devices that include a plurality of landing pad holes that are arranged in a staggered pattern and integrated circuit memory devices formed thereby
SAMSUNG ELECTRONICS CO LTD14 citations83
US5378908AJan 3, 1995
Stack capacitor DRAM cell having increased capacitor area
SAMSUNG ELECTRONICS CO LTD15 citations82
US5120674AJun 9, 1992
Method of making stacked capacitor dram cell
SAMSUNG ELECTRONICS CO LTD19 citations82
US7670910B2Mar 2, 2010
Method of forming self-aligned inner gate recess channel transistor
SAMSUNG ELECTRONICS CO LTD7 citations74
US7666743B2Feb 23, 2010
Methods of fabricating semiconductor devices including transistors having recessed channels
SAMSUNG ELECTRONICS CO LTD7 citations74
US7388243B2Jun 17, 2008
Self-Aligned buried contact pair
SAMSUNG ELECTRONICS CO LTD8 citations74
US7180118B2Feb 20, 2007
Semiconductor device including storage node and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7049203B2May 23, 2006
Semiconductor device having a capacitor and method of fabricating same
SAMSUNG ELECTRONICS CO LTD10 citations74
US6458680B2Oct 1, 2002
Method of fabricating contact pads of a semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations74
US6288446B2Sep 11, 2001
Semiconductor device with pillar-shaped capacitor storage node
SAMSUNG ELECTRONICS CO LTD5 citations74
US5766970AJun 16, 1998
Method of manufacturing a twin well semiconductor device with improved planarity
SAMSUNG ELECTRONICS CO LTD7 citations74
US6670663B2Dec 30, 2003
DRAM cell capacitor and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD10 citations73
US6277702B1Aug 21, 2001
Capacitor of a semiconductor device and a method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations73
US6229171B1May 8, 2001
Storage element for semiconductor capacitor
SAMSUNG ELECTRONICS CO LTD10 citations73
US7074667B2Jul 11, 2006
Semiconductor memory device including storage nodes and resistors and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US9568379B2Feb 14, 2017
Apparatus and method for measuring tactile information
SAMSUNG ELECTRONICS CO LTD3 citations70
US9496336B2Nov 15, 2016
Semiconductor device having vertical channels and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9099325B2Aug 4, 2015
Semiconductor device having vertical channels and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US8039876B2Oct 18, 2011
Metal oxide semiconductor (MOS) transistors having a recessed gate electrode
SAMSUNG ELECTRONICS CO LTD2 citations63
US7547938B2Jun 16, 2009
Semiconductor devices having elongated contact plugs
SAMSUNG ELECTRONICS CO LTD3 citations63
US7492004B2Feb 17, 2009
Transistors having a channel region between channel-portion holes and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7488654B2Feb 10, 2009
Fabrication of local damascene finFETs using contact type nitride damascene mask
SAMSUNG ELECTRONICS CO LTD2 citations63
US7476585B2Jan 13, 2009
Semiconductor device including storage node and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7368778B2May 6, 2008
DRAM having at least three layered impurity regions between channel holes and method of fabricating same
SAMSUNG ELECTRONICS CO LTD4 citations63
USRE36261EAug 3, 1999
Stack capacitor DRAM cell having increased capacitor area
SAMSUNG ELECTRONICS CO LTD2 citations63
HYUNDAI MOTOR CO LTD
5 patentsUS9527503B2Dec 27, 2016
Active vibration reduction control apparatus and method of hybrid vehicle
HYUNDAI MOTOR CO LTD17 citations83
US10150466B2Dec 11, 2018
Shift control apparatus for hybrid vehicle and method therof
HYUNDAI MOTOR CO LTD8 citations79
US9925891B2Mar 27, 2018
Method for reducing drive shaft vibration of eco-friendly vehicle
HYUNDAI MOTOR CO LTD5 citations73
US10879827B2Dec 29, 2020
Apparatus for reducing belt slip
HYUNDAI MOTOR CO LTD2 citations70
US9796292B2Oct 24, 2017
System and method for cooling electric vehicle
HYUNDAI MOTOR CO LTD2 citations70
KIM YONG-SUNG
1 patentCJ LOGISTICS CORP
1 patentShowing the top 50 of 79 patents by PatentIndex Score.