P

Inventor

CHEN IH-CHIN

US19 patents
⚠️ This page may combine multiple inventors who share the name “CHEN IH-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

18 patents
US6287924B1Sep 11, 2001

Integrated circuit and method

TEXAS INSTRUMENTS INC118 citations97
US6313010B1Nov 6, 2001

Integrated circuit insulator and method

TEXAS INSTRUMENTS INC62 citations96
US5917219AJun 29, 1999

Semiconductor devices with pocket implant and counter doping

TEXAS INSTRUMENTS INC58 citations96
US5739569AApr 14, 1998

Non-volatile memory cell with oxide and nitride tunneling layers

TEXAS INSTRUMENTS INC58 citations96
US4882649ANov 21, 1989

Nitride/oxide/nitride capacitor dielectric

TEXAS INSTRUMENTS INC58 citations95
US5909628AJun 1, 1999

Reducing non-uniformity in a refill layer thickness for a semiconductor device

TEXAS INSTRUMENTS INC54 citations94
US6228725B1May 8, 2001

Semiconductor devices with pocket implant and counter doping

TEXAS INSTRUMENTS INC21 citations93
US6960499B2Nov 1, 2005

Dual-counterdoped channel field effect transistor and method

TEXAS INSTRUMENTS INC30 citations92
US5894145AApr 13, 1999

Multiple substrate bias random access memory device

TEXAS INSTRUMENTS INC23 citations92
US5274261ADec 28, 1993

Integrated circuit degradation resistant structure

TEXAS INSTRUMENTS INC22 citations92
US4888820ADec 19, 1989

Stacked insulating film including yttrium oxide

TEXAS INSTRUMENTS INC31 citations90
US6147384ANov 14, 2000

Method for forming planar field effect transistors with source and drain an insulator and device constructed therefrom

TEXAS INSTRUMENTS INC16 citations84
US6306724B1Oct 23, 2001

Method of forming a trench isolation structure in a stack trench capacitor fabrication process

TEXAS INSTRUMENTS INC8 citations74
US5913135AJun 15, 1999

Method for forming planar field effect transistors with source and drain on oxide and device constructed therefrom

TEXAS INSTRUMENTS INC8 citations74
US5595925AJan 21, 1997

Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein

TEXAS INSTRUMENTS INC11 citations74
US6143625ANov 7, 2000

Protective liner for isolation trench side walls and method

TEXAS INSTRUMENTS INC15 citations73
US6420236B1Jul 16, 2002

Hydrogen treatment for threshold voltage shift of metal gate MOSFET devices

TEXAS INSTRUMENTS INC12 citations72
US5548548AAug 20, 1996

Pass transistor for a 256 megabit dram with negatively biased substrate

TEXAS INSTRUMENTS INC2 citations59

TAIWAN SEMICONDUCTOR MFG

1 patent