P

Inventor

WANG YUN Y

US7 patents
⚠️ This page may combine multiple inventors who share the name “WANG YUN Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

4 patents
US9680019B1Jun 13, 2017

Fin-type field-effect transistors with strained channels

GLOBALFOUNDRIES INC3 citations72
US10192887B2Jan 29, 2019

Method to improve crystalline regrowth

GLOBALFOUNDRIES INC1 citations55
US9905694B2Feb 27, 2018

Fin-type field-effect transistors with strained channels

GLOBALFOUNDRIES INC1 citations51
US9853055B2Dec 26, 2017

Method to improve crystalline regrowth

GLOBALFOUNDRIES INC0 citations44

IBM

2 patents
US7750418B2Jul 6, 2010

Introduction of metal impurity to change workfunction of conductive electrodes

IBM18 citations92
US7425497B2Sep 16, 2008

Introduction of metal impurity to change workfunction of conductive electrodes

IBM14 citations84

IWATAKE MICHAEL M

1 patent
US8288828B2Oct 16, 2012

Via contact structure having dual silicide layers

IWATAKE MICHAEL M2 citations50