Inventor
LIN JUNG-I
TW10 patents
⚠️ This page may combine multiple inventors who share the name “LIN JUNG-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS9559134B2Jan 31, 2017
Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US12507490B2Dec 23, 2025
Semiconductor device including germanium region disposed in semiconductor substrate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations74
US10170517B2Jan 1, 2019
Method for forming image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations69
US12183764B2Dec 31, 2024
Channel pattern design to improve carrier transfer efficiency
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901393B2Feb 13, 2024
Image sensor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10163972B2Dec 25, 2018
Image sensing device with photon blocking layer and anti-reflective coating
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9805970B2Oct 31, 2017
Method for forming deep trench spacing isolation for CMOS image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11139367B2Oct 5, 2021
High density MIM capacitor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49