Inventor

DEZELAH CHARLES

FI48 patents

⚠️ This page may combine multiple inventors who share the name “DEZELAH CHARLES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DEZELAH CHARLES

ASM IP HOLDING BV

Method of forming structures including a vanadium or indium layer

Simultaneous selective deposition of two different materials on two different surfaces

Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

Method of forming vanadium nitride layer and structure including the vanadium nitride layer

Transition metal nitride deposition method

Method of forming vanadium nitride layer and structure including the vanadium nitride layer

Method of depositing vanadium metal

Method of forming structures for threshold voltage control

Methods and systems for filling a gap

Method of forming structures including a vanadium or indium layer

Deposition of boron nitride films using hydrazido-based precursors

Selective passivation and selective deposition

Multiple-layer method and system for forming material within a gap

Transition metal nitride deposition method

Methods and systems for delivery of vanadium compounds

Methods and apparatus for stabilizing vanadium compounds

Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

Method of forming chromium nitride layer and structure including the chromium nitride layer

Atomic layer etching

Silicon precursors for silicon nitride deposition

Atomic layer etching

Method of depositing vanadium metal

Methods and systems for forming a layer comprising aluminum, titanium, and carbon

Methods of forming copper iodide layer and structures including copper iodide layer

Silicon oxide deposition method

Methods and systems for filling a gap

Atomic layer deposition of indium gallium zinc oxide

Simultaneous selective deposition of two different materials on two different surfaces

Method of cleaning a surface

Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

Selective deposition of organic material

Methods of forming structures including vanadium boride and vanadium phosphide layers

Selective deposition of material comprising silicon and oxygen using plasma

Transition metal deposition method

Methods and systems for forming a layer comprising a transitional metal and a group 13 element

Transition metal deposition processes and deposition assembly

Etch process and a processing assembly

Methods and systems for forming a layer comprising vanadium and oxygen

Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same

Low temperature flowable vanadium oxide gap fill

Method and wafer processing furnace for forming an epitaxial stack of semiconductor epitaxial layers on a plurality of substrates

Photosensitive material and method of forming patterned structures

MERCK PATENT GMBH

Deposition of molybdenum thin films using a molybdenum carbonyl precursor

Metal complexes containing cyclopentadienyl ligands

Methods of atomic layer deposition for selective film growth

Metal complexes containing cyclopentadienyl ligands

Metal complexes containing allyl ligands

Compounds and methods for selectively forming metal-containing films