Inventor
FALSTER ROBERT A
IT3 patents
Patents
3 patentsUS5919302AJul 6, 1999
Low defect density vacancy dominated silicon
MEMC ELECTRONIC MATERIALS139 citations97
US6409826B2Jun 25, 2002
Low defect density, self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS17 citations91
US6555194B1Apr 29, 2003
Process for producing low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS4 citations73