Inventor
CHAE HEE-SOON
KR11 patents
⚠️ This page may combine multiple inventors who share the name “CHAE HEE-SOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS6936884B2Aug 30, 2005
Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
SAMSUNG ELECTRONICS CO LTD67 citations97
US7345898B2Mar 18, 2008
Complementary nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD22 citations92
US6946346B2Sep 20, 2005
Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element
SAMSUNG ELECTRONICS CO LTD20 citations92
US6670670B2Dec 30, 2003
Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD28 citations92
US7202521B2Apr 10, 2007
Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US7349262B2Mar 25, 2008
Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
SAMSUNG ELECTRONICS CO LTD7 citations72
US7719871B2May 18, 2010
Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US6664123B2Dec 16, 2003
Method for etching metal layer on a scale of nanometers
SAMSUNG ELECTRONICS CO LTD3 citations62