Inventor
RYU WON-IL
KR7 patents
Patents
7 patentsUS6936884B2Aug 30, 2005
Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
SAMSUNG ELECTRONICS CO LTD67 citations97
US6946703B2Sep 20, 2005
SONOS memory device having side gate stacks and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD83 citations95
US6946346B2Sep 20, 2005
Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element
SAMSUNG ELECTRONICS CO LTD20 citations92
US6670670B2Dec 30, 2003
Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD28 citations92
US6429472B2Aug 6, 2002
Split gate type flash memory
SAMSUNG ELECTRONICS CO LTD9 citations73
US7374991B2May 20, 2008
SONOS memory device having side gate stacks and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US6664123B2Dec 16, 2003
Method for etching metal layer on a scale of nanometers
SAMSUNG ELECTRONICS CO LTD3 citations62