Inventor
HAN SANGYEON
KR19 patents
⚠️ This page may combine multiple inventors who share the name “HAN SANGYEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS10490444B2Nov 26, 2019
Semiconductor devices having an air gap
SAMSUNG ELECTRONICS CO LTD12 citations92
US10665592B2May 26, 2020
Semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US11764107B2Sep 19, 2023
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US11410951B2Aug 9, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations72
US10910261B2Feb 2, 2021
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11778807B2Oct 3, 2023
Semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11114440B2Sep 7, 2021
Semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11502084B2Nov 15, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations70
US11289488B2Mar 29, 2022
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations70
US12381146B2Aug 5, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12127394B2Oct 22, 2024
Semiconductor devices having buried gates
SAMSUNG ELECTRONICS CO LTD0 citations61
US11626409B2Apr 11, 2023
Semiconductor devices having buried gates
SAMSUNG ELECTRONICS CO LTD1 citations61
US12156401B2Nov 26, 2024
Three-dimensional semiconductor memory device and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations54
US9287300B2Mar 15, 2016
Methods for fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations52
US11751378B2Sep 5, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
US11765905B2Sep 19, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations48