Inventor
LEHNERT WOLFGANG
DE41 patents
⚠️ This page may combine multiple inventors who share the name “LEHNERT WOLFGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
31 patentsUS10903078B2Jan 26, 2021
Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device
INFINEON TECHNOLOGIES AG9 citations84
US9704750B2Jul 11, 2017
Method for forming a semiconductor device and a semiconductor device
INFINEON TECHNOLOGIES AG5 citations84
US10020226B2Jul 10, 2018
Method for forming a semiconductor device and a semiconductor device
INFINEON TECHNOLOGIES AG2 citations73
US9793167B2Oct 17, 2017
Method for forming a wafer structure, a method for forming a semiconductor device and a wafer structure
INFINEON TECHNOLOGIES AG2 citations73
US9590044B2Mar 7, 2017
Two-dimensional material containing electronic components
INFINEON TECHNOLOGIES AG5 citations73
US9219049B2Dec 22, 2015
Compound structure and method for forming a compound structure
INFINEON TECHNOLOGIES AG4 citations73
US11107732B2Aug 31, 2021
Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers
INFINEON TECHNOLOGIES AG2 citations72
US10103123B2Oct 16, 2018
Semiconductor devices and processing methods
INFINEON TECHNOLOGIES AG4 citations72
US9576844B2Feb 21, 2017
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
INFINEON TECHNOLOGIES AG3 citations72
US9165821B2Oct 20, 2015
Method for providing a self-aligned pad protection in a semiconductor device
INFINEON TECHNOLOGIES AG4 citations72
US11373863B2Jun 28, 2022
Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate
INFINEON TECHNOLOGIES AG3 citations71
US12494431B2Dec 9, 2025
Power semiconductor device and method of producing a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations62
US10784145B2Sep 22, 2020
Wafer composite and method for producing a semiconductor component
INFINEON TECHNOLOGIES AG1 citations62
US10651072B2May 12, 2020
Wafer composite and method for producing semiconductor components
INFINEON TECHNOLOGIES AG1 citations62
US11424201B2Aug 23, 2022
Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic device
INFINEON TECHNOLOGIES AG0 citations61
US11887894B2Jan 30, 2024
Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers
INFINEON TECHNOLOGIES AG1 citations60
US11557506B2Jan 17, 2023
Methods for processing a semiconductor substrate
INFINEON TECHNOLOGIES AG0 citations60
US12363961B2Jul 15, 2025
Semiconductor device
INFINEON TECHNOLOGIES AG0 citations59
US12040288B2Jul 16, 2024
Chip package and method of forming a chip package
INFINEON TECHNOLOGIES AG0 citations59
US11735534B2Aug 22, 2023
Chip package and method of forming a chip package
INFINEON TECHNOLOGIES AG0 citations59
US9252045B2Feb 2, 2016
Method for manufacturing a composite wafer having a graphite core
INFINEON TECHNOLOGIES AG0 citations52
US12489017B2Dec 2, 2025
Method of manufacturing a semiconductor package, die, and die package
INFINEON TECHNOLOGIES AG0 citations51
US11557505B2Jan 17, 2023
Method of manufacturing a template wafer
INFINEON TECHNOLOGIES AG0 citations51
US9881991B2Jan 30, 2018
Capacitor and method of forming a capacitor
INFINEON TECHNOLOGIES AG0 citations51
US9583559B2Feb 28, 2017
Capacitor having a top compressive polycrystalline plate
INFINEON TECHNOLOGIES AG0 citations51
US9385031B2Jul 5, 2016
Method for providing a self-aligned pad protection in a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US9224633B2Dec 29, 2015
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
INFINEON TECHNOLOGIES AG0 citations51
US9196675B2Nov 24, 2015
Capacitor and method of forming a capacitor
INFINEON TECHNOLOGIES AG0 citations51
US9012295B2Apr 21, 2015
Compressive polycrystalline silicon film and method of manufacture thereof
INFINEON TECHNOLOGIES AG0 citations51
US9349804B2May 24, 2016
Composite wafer for bonding and encapsulating an SiC-based functional layer
INFINEON TECHNOLOGIES AG1 citations50
US11328935B2May 10, 2022
Method of forming a layer structure, layer structure, method of forming a contact structure, method of forming a chip package, and chip package
INFINEON TECHNOLOGIES AG0 citations45
BERGER RUDOLF
2 patentsUS8822306B2Sep 2, 2014
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
BERGER RUDOLF16 citations90
US8404562B2Mar 26, 2013
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
BERGER RUDOLF1 citations51