P

Inventor

LEHNERT WOLFGANG

DE41 patents
⚠️ This page may combine multiple inventors who share the name “LEHNERT WOLFGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

31 patents
US10903078B2Jan 26, 2021

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

INFINEON TECHNOLOGIES AG9 citations84
US9704750B2Jul 11, 2017

Method for forming a semiconductor device and a semiconductor device

INFINEON TECHNOLOGIES AG5 citations84
US10020226B2Jul 10, 2018

Method for forming a semiconductor device and a semiconductor device

INFINEON TECHNOLOGIES AG2 citations73
US9793167B2Oct 17, 2017

Method for forming a wafer structure, a method for forming a semiconductor device and a wafer structure

INFINEON TECHNOLOGIES AG2 citations73
US9590044B2Mar 7, 2017

Two-dimensional material containing electronic components

INFINEON TECHNOLOGIES AG5 citations73
US9219049B2Dec 22, 2015

Compound structure and method for forming a compound structure

INFINEON TECHNOLOGIES AG4 citations73
US11107732B2Aug 31, 2021

Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers

INFINEON TECHNOLOGIES AG2 citations72
US10103123B2Oct 16, 2018

Semiconductor devices and processing methods

INFINEON TECHNOLOGIES AG4 citations72
US9576844B2Feb 21, 2017

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

INFINEON TECHNOLOGIES AG3 citations72
US9165821B2Oct 20, 2015

Method for providing a self-aligned pad protection in a semiconductor device

INFINEON TECHNOLOGIES AG4 citations72
US11373863B2Jun 28, 2022

Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate

INFINEON TECHNOLOGIES AG3 citations71
US12494431B2Dec 9, 2025

Power semiconductor device and method of producing a power semiconductor device

INFINEON TECHNOLOGIES AG0 citations62
US10784145B2Sep 22, 2020

Wafer composite and method for producing a semiconductor component

INFINEON TECHNOLOGIES AG1 citations62
US10651072B2May 12, 2020

Wafer composite and method for producing semiconductor components

INFINEON TECHNOLOGIES AG1 citations62
US11424201B2Aug 23, 2022

Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic device

INFINEON TECHNOLOGIES AG0 citations61
US11887894B2Jan 30, 2024

Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers

INFINEON TECHNOLOGIES AG1 citations60
US11557506B2Jan 17, 2023

Methods for processing a semiconductor substrate

INFINEON TECHNOLOGIES AG0 citations60
US12363961B2Jul 15, 2025

Semiconductor device

INFINEON TECHNOLOGIES AG0 citations59
US12040288B2Jul 16, 2024

Chip package and method of forming a chip package

INFINEON TECHNOLOGIES AG0 citations59
US11735534B2Aug 22, 2023

Chip package and method of forming a chip package

INFINEON TECHNOLOGIES AG0 citations59
US9252045B2Feb 2, 2016

Method for manufacturing a composite wafer having a graphite core

INFINEON TECHNOLOGIES AG0 citations52
US12489017B2Dec 2, 2025

Method of manufacturing a semiconductor package, die, and die package

INFINEON TECHNOLOGIES AG0 citations51
US11557505B2Jan 17, 2023

Method of manufacturing a template wafer

INFINEON TECHNOLOGIES AG0 citations51
US9881991B2Jan 30, 2018

Capacitor and method of forming a capacitor

INFINEON TECHNOLOGIES AG0 citations51
US9583559B2Feb 28, 2017

Capacitor having a top compressive polycrystalline plate

INFINEON TECHNOLOGIES AG0 citations51
US9385031B2Jul 5, 2016

Method for providing a self-aligned pad protection in a semiconductor device

INFINEON TECHNOLOGIES AG0 citations51
US9224633B2Dec 29, 2015

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

INFINEON TECHNOLOGIES AG0 citations51
US9196675B2Nov 24, 2015

Capacitor and method of forming a capacitor

INFINEON TECHNOLOGIES AG0 citations51
US9012295B2Apr 21, 2015

Compressive polycrystalline silicon film and method of manufacture thereof

INFINEON TECHNOLOGIES AG0 citations51
US9349804B2May 24, 2016

Composite wafer for bonding and encapsulating an SiC-based functional layer

INFINEON TECHNOLOGIES AG1 citations50
US11328935B2May 10, 2022

Method of forming a layer structure, layer structure, method of forming a contact structure, method of forming a chip package, and chip package

INFINEON TECHNOLOGIES AG0 citations45

BERGER RUDOLF

2 patents

LEHNERT WOLFGANG

2 patents

INFINEON TECHNOLOGIES AUSTRIA

2 patents

MAUDER ANTON

1 patent

INFINEON TECHNOLOGIES AUSTRIA AG

1 patent

TELAIR INT GMBH

1 patent

AHRENS CARSTEN

1 patent