Inventor
NISHIMATSU SHIGERU
26 patents
Patents
26 patentsUS4579623AApr 1, 1986
Method and apparatus for surface treatment by plasma
HITACHI LTD654 citations99
US4481229ANov 6, 1984
Method for growing silicon-including film by employing plasma deposition
HITACHI LTD143 citations97
US4901667AFeb 20, 1990
Surface treatment apparatus
HITACHI LTD103 citations96
US4522674AJun 11, 1985
Surface treatment apparatus
HITACHI LTD71 citations96
US4330384AMay 18, 1982
Process for plasma etching
HITACHI LTD52 citations96
US4462863AJul 31, 1984
Microwave plasma etching
HITACHI LTD59 citations95
US4609426ASep 2, 1986
Method and apparatus for monitoring etching
HITACHI LTD63 citations94
US5220169AJun 15, 1993
Surface analyzing method and apparatus
HITACHI LTD28 citations92
US5140272AAug 18, 1992
Method of semiconductor surface measurment and an apparatus for realizing the same
HITACHI LTD34 citations92
US5138158AAug 11, 1992
Surface analysis method and apparatus
HITACHI LTD29 citations92
US5108543AApr 28, 1992
Method of surface treatment
HITACHI LTD36 citations92
US5108778AApr 28, 1992
Surface treatment method
HITACHI LTD33 citations92
US5028778AJul 2, 1991
Surface analysis method and a device therefor
HITACHI LTD23 citations92
US4886571ADec 12, 1989
Surface treatment and apparatus therefor
HITACHI LTD33 citations92
US4705595ANov 10, 1987
Method for microwave plasma processing
HITACHI LTD32 citations92
US4624214ANov 25, 1986
Dry-processing apparatus
HITACHI LTD30 citations92
US4559100ADec 17, 1985
Microwave plasma etching apparatus
HITACHI LTD43 citations92
US4433228AFeb 21, 1984
Microwave plasma source
HITACHI LTD43 citations92
US4298419ANov 3, 1981
Dry etching apparatus
HITACHI LTD39 citations92
US4828874AMay 9, 1989
Laser surface treatment method and apparatus for practicing same
HITACHI LTD23 citations82
US4430138AFeb 7, 1984
Microwave plasma etching apparatus having fan-shaped discharge
HITACHI LTD21 citations82
US4270262AJun 2, 1981
Semiconductor device and process for making the same
HITACHI LTD21 citations82
US4451841AMay 29, 1984
Semiconductor device with multi-layered electrodes
HITACHI LTD11 citations74
US4361949ADec 7, 1982
Process for making a memory device
HITACHI LTD5 citations74
US4005450AJan 25, 1977
Insulated gate field effect transistor having drain region containing low impurity concentration layer
HITACHI LTD19 citations74
US4436581AMar 13, 1984
Uniform etching of silicon (doped and undoped) utilizing ions
HITACHI LTD11 citations72