Inventor
LEE CHING-HUA
TW22 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHING-HUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS11133222B2Sep 28, 2021
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11929422B2Mar 12, 2024
Passivation layers for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11695055B2Jul 4, 2023
Passivation layers for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11251268B2Feb 15, 2022
Semiconductor device with doped structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US12581677B2Mar 17, 2026
Passivation layers for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942376B2Mar 26, 2024
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11676867B2Jun 13, 2023
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11450571B2Sep 20, 2022
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11232953B2Jan 25, 2022
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12288809B2Apr 29, 2025
Semiconductor device with doped structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11990512B2May 21, 2024
Semiconductor device with doped structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12243934B2Mar 4, 2025
Channel structures including doped 2D materials for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12100755B2Sep 24, 2024
Channel structures including doped 2D materials for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US10276444B2Apr 30, 2019
Method of forming oxide layer for FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49