Inventor
KASAI NAOKI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “KASAI NAOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
30 patentsUS4951117AAug 21, 1990
Isolation of insulated-gate field-effect transistors
NEC CORP162 citations99
US6030894AFeb 29, 2000
Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si
NEC CORP131 citations98
US6218197B1Apr 17, 2001
Embedded LSI having a FeRAM section and a logic circuit section
NEC CORP58 citations96
US5905283AMay 18, 1999
Method of forming a MOS transistor having gate insulators of different thicknesses
NEC CORP67 citations96
US5811336ASep 22, 1998
Method of forming MOS transistors having gate insulators of different thicknesses
NEC CORP57 citations96
US6768151B2Jul 27, 2004
Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same
NEC CORP22 citations92
US6465826B2Oct 15, 2002
Embedded LSI having a FeRAM section and a logic circuit section
NEC CORP16 citations92
US6235575B1May 22, 2001
Semiconductor device and method for manufacturing same
NEC CORP31 citations92
US5912509AJun 15, 1999
MOS semiconductor device and method of manufacturing the same
NEC CORP22 citations92
US5909059AJun 1, 1999
Semiconductor device having contact plug and method for manufacturing the same
NEC CORP37 citations92
US5907788AMay 25, 1999
Semiconductor device capable of easily filling contact conductor plug in contact hole
NEC CORP39 citations92
US5895948AApr 20, 1999
Semiconductor device and fabrication process thereof
NEC CORP32 citations92
US5856938AJan 5, 1999
Small-sized multi-valued semiconductor memory device with coupled capacitors between divided bit lines
NEC CORP27 citations92
US5821594AOct 13, 1998
Semiconductor device having a self-aligned type contact hole
NEC CORP29 citations92
US6348408B1Feb 19, 2002
Semiconductor device with reduced number of intermediate level interconnection pattern and method of forming the same
NEC CORP18 citations84
US5760600AJun 2, 1998
Test device for insulated-gate field effect transistor and testing circuit and testing method using the same
NEC CORP18 citations84
US5840621ANov 24, 1998
Method for manufacturing contact structure capable of avoiding short-circuit
NEC CORP16 citations82
US5654236AAug 5, 1997
Method for manufacturing contact structure capable of avoiding short-circuit
NEC CORP16 citations82
US6255218B1Jul 3, 2001
Semiconductor device and fabrication method thereof
NEC CORP8 citations74
US6190987B1Feb 20, 2001
MOS semiconductor device and method of manufacturing the same
NEC CORP5 citations74
US5973371AOct 26, 1999
Semiconductor device with marginless contact hole
NEC CORP13 citations74
US5381030AJan 10, 1995
Semiconductor memory device with improved step protection and manufacturing method thereof
NEC CORP8 citations74
US6448597B1Sep 10, 2002
DRAM having a stacked capacitor and a method for fabricating the same
NEC CORP11 citations73
US6300647B1Oct 9, 2001
Characteristic-evaluating storage capacitors
NEC CORP12 citations73
US7848137B2Dec 7, 2010
MRAM and data read/write method for MRAM
NEC CORP2 citations63
US6352891B1Mar 5, 2002
Method of manufacturing semiconductor device in which hot carrier resistance can be improved and silicide layer can be formed with high reliability
NEC CORP6 citations63
US5968692AOct 19, 1999
Integrated circuit pattern lithography method capable of reducing the number of shots in partial batch exposure
NEC CORP2 citations63
US5913121AJun 15, 1999
Method of making a self-aligning type contact hole for a semiconductor device
NEC CORP5 citations63
US5946570AAug 31, 1999
Process for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layer
NEC CORP4 citations62
US6034384AMar 7, 2000
Semiconductor memory device having memory cells similarly layouted and peripheral circuits symmetrically layouted in memory cell arrays
NEC CORP1 citations52