P

Inventor

KOYAMA MASATO

JP96 patents
⚠️ This page may combine multiple inventors who share the name “KOYAMA MASATO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

29 patents
US6613658B2Sep 2, 2003

MIS field effect transistor and method of manufacturing the same

TOSHIBA KK44 citations96
US7807990B2Oct 5, 2010

Semiconductor device

TOSHIBA KK22 citations93
US7804145B2Sep 28, 2010

Semiconductor device, capacitor, and field effect transistor

TOSHIBA KK28 citations93
US7563678B2Jul 21, 2009

Semiconductor device and method of manufacturing the same

TOSHIBA KK21 citations93
US7485936B2Feb 3, 2009

Semiconductor device and method of manufacturing the same

TOSHIBA KK16 citations93
US7964489B2Jun 21, 2011

Semiconductor device

TOSHIBA KK13 citations84
US7825458B2Nov 2, 2010

Nonvolatile semiconductor memory and manufacturing method thereof

TOSHIBA KK12 citations84
US7667273B2Feb 23, 2010

Semiconductor device and method for manufacturing the same

TOSHIBA KK12 citations84
US7608849B2Oct 27, 2009

Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements

TOSHIBA KK16 citations84
US7429777B2Sep 30, 2008

Semiconductor device with a gate electrode having a laminate structure

TOSHIBA KK10 citations84
US6602753B2Aug 5, 2003

Semiconductor device having a gate insulating film comprising a metal oxide and method of manufacturing the same

TOSHIBA KK15 citations84
US6849908B2Feb 1, 2005

Semiconductor device and method of manufacturing the same

TOSHIBA KK16 citations83
US7541657B2Jun 2, 2009

Semiconductor device and method for manufacturing the same

TOSHIBA KK6 citations74
US7498643B2Mar 3, 2009

Semiconductor device and method for manufacturing the same

TOSHIBA KK6 citations74
US7432570B2Oct 7, 2008

Semiconductor device and manufacturing method thereof

TOSHIBA KK5 citations74
US7429776B2Sep 30, 2008

Semiconductor device and method for manufacturing the same

TOSHIBA KK4 citations74
US7391085B2Jun 24, 2008

Semiconductor device

TOSHIBA KK7 citations74
US7075158B2Jul 11, 2006

Semiconductor device and method of manufacturing the same

TOSHIBA KK7 citations74
US6803635B2Oct 12, 2004

MIS field effect transistor with metal oxynitride film

TOSHIBA KK9 citations74
US8053300B2Nov 8, 2011

Semiconductor device

TOSHIBA KK2 citations63
US7986014B2Jul 26, 2011

Semiconductor device

TOSHIBA KK2 citations63
US7968956B2Jun 28, 2011

Semiconductor device

TOSHIBA KK5 citations63
US7960793B2Jun 14, 2011

Semiconductor device

TOSHIBA KK3 citations63
US7863695B2Jan 4, 2011

Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS

TOSHIBA KK5 citations63
US7745888B2Jun 29, 2010

Method of making p-channel and n-channel MIS transistors using single film formation of TaC

TOSHIBA KK2 citations63
US7728394B2Jun 1, 2010

Semiconductor device and manufacturing method thereof

TOSHIBA KK2 citations63
US7727832B2Jun 1, 2010

Semiconductor device and method for manufacturing the same

TOSHIBA KK2 citations63
US7632728B2Dec 15, 2009

Method of forming TaC gate electrodes with crystal orientation ratio defining the work function

TOSHIBA KK2 citations63
US7612413B2Nov 3, 2009

Semiconductor device and manufacturing method thereof

TOSHIBA KK2 citations63

MITSUBISHI ELECTRIC CORP

12 patents

MITSUI CHEMICALS INC

2 patents

MITSUI TOATSU CHEMICALS

2 patents

NISSAN MOTOR

2 patents

SONY CORP

1 patent

KOBELCO CONSTR MACHINERY LTD

1 patent

ICHIHARA REIKA

1 patent

Showing the top 50 of 96 patents by PatentIndex Score.