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Inventor

BALDI LIVIO

IT37 patents
⚠️ This page may combine multiple inventors who share the name “BALDI LIVIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SGS THOMSON MICROELECTRONICS

14 patents
US5761222AJun 2, 1998

Memory device having error detection and correction function, and methods for reading, writing and erasing the memory device

SGS THOMSON MICROELECTRONICS141 citations98
US5708451AJan 13, 1998

Method and device for uniforming luminosity and reducing phosphor degradation of a field emission flat display

SGS THOMSON MICROELECTRONICS98 citations98
US6465950B1Oct 15, 2002

Method of fabricating flat fed screens, and flat screen obtained thereby

SGS THOMSON MICROELECTRONICS15 citations92
US5847504ADec 8, 1998

Field emission display with diode-limited cathode current

SGS THOMSON MICROELECTRONICS22 citations92
US4968645ANov 6, 1990

Method for manufacturing MOS/CMOS monolithic integrated circuits including silicide and polysilicon patterning

SGS THOMSON MICROELECTRONICS32 citations90
US6188121B1Feb 13, 2001

High voltage capacitor

SGS THOMSON MICROELECTRONICS15 citations84
US5817557AOct 6, 1998

Process of fabricating tunnel-oxide nonvolatile memory devices

SGS THOMSON MICROELECTRONICS10 citations74
US5589701ADec 31, 1996

Process for realizing P-channel MOS transistors having a low threshold voltage in semiconductor integrated circuits for analog applications

SGS THOMSON MICROELECTRONICS12 citations74
US5534448AJul 9, 1996

Process for realizing P-channel MOS transistors having a low threshold voltage in semiconductor integrated circuits for analog applications

SGS THOMSON MICROELECTRONICS9 citations74
US5372956ADec 13, 1994

Method for making direct contacts in high density MOS/CMOS processes

SGS THOMSON MICROELECTRONICS7 citations74
US6036566AMar 14, 2000

Method of fabricating flat FED screens

SGS THOMSON MICROELECTRONICS8 citations73
US6000980ADec 14, 1999

Process for fabricating a microtip cathode assembly for a field emission display panel

SGS THOMSON MICROELECTRONICS15 citations67
US6350676B1Feb 26, 2002

Method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers

SGS THOMSON MICROELECTRONICS3 citations63
US5850360ADec 15, 1998

High-voltage N-channel MOS transistor and associated manufacturing process

SGS THOMSON MICROELECTRONICS3 citations63

ST MICROELECTRONICS SRL

12 patents
US6547151B1Apr 15, 2003

Currency note comprising an integrated circuit

ST MICROELECTRONICS SRL79 citations98
US5231051AJul 27, 1993

Method for formation of contact plugs utilizing etchback

ST MICROELECTRONICS SRL30 citations92
US5793086AAug 11, 1998

NOR-type ROM with LDD cells and process of fabrication

ST MICROELECTRONICS SRL23 citations90
US5407852AApr 18, 1995

Method of making NOR-type ROM with LDD cells

ST MICROELECTRONICS SRL29 citations90
US6399442B1Jun 4, 2002

Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device

ST MICROELECTRONICS SRL6 citations74
US5659501AAug 19, 1997

Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device

ST MICROELECTRONICS SRL7 citations74
US5528536AJun 18, 1996

Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device

ST MICROELECTRONICS SRL6 citations74
US7125808B2Oct 24, 2006

Method for manufacturing non-volatile memory cells on a semiconductor substrate

ST MICROELECTRONICS SRL8 citations71
US5818760AOct 6, 1998

Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device

ST MICROELECTRONICS SRL1 citations63
US6812531B1Nov 2, 2004

Matrix of memory cells fabricated by means of a self-aligned source process, comprising ROM memory cells, and related manufacturing process

ST MICROELECTRONICS SRL6 citations62
US7125807B2Oct 24, 2006

Method for manufacturing non-volatile memory cells on a semiconductor substrate

ST MICROELECTRONICS SRL1 citations49
US6747309B2Jun 8, 2004

Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device

ST MICROELECTRONICS SRL0 citations42

SGS MICROELETTRONICA SPA

4 patents

MICRON TECHNOLOGY INC

4 patents

ATES COMPONENTI ELETTRON

1 patent

BRAZZELLI DANIELA

1 patent

STMICROELETRONICS S R L

1 patent