Inventor
BALDI LIVIO
IT37 patents
⚠️ This page may combine multiple inventors who share the name “BALDI LIVIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
14 patentsUS5761222AJun 2, 1998
Memory device having error detection and correction function, and methods for reading, writing and erasing the memory device
SGS THOMSON MICROELECTRONICS141 citations98
US5708451AJan 13, 1998
Method and device for uniforming luminosity and reducing phosphor degradation of a field emission flat display
SGS THOMSON MICROELECTRONICS98 citations98
US6465950B1Oct 15, 2002
Method of fabricating flat fed screens, and flat screen obtained thereby
SGS THOMSON MICROELECTRONICS15 citations92
US5847504ADec 8, 1998
Field emission display with diode-limited cathode current
SGS THOMSON MICROELECTRONICS22 citations92
US4968645ANov 6, 1990
Method for manufacturing MOS/CMOS monolithic integrated circuits including silicide and polysilicon patterning
SGS THOMSON MICROELECTRONICS32 citations90
US6188121B1Feb 13, 2001
High voltage capacitor
SGS THOMSON MICROELECTRONICS15 citations84
US5817557AOct 6, 1998
Process of fabricating tunnel-oxide nonvolatile memory devices
SGS THOMSON MICROELECTRONICS10 citations74
US5589701ADec 31, 1996
Process for realizing P-channel MOS transistors having a low threshold voltage in semiconductor integrated circuits for analog applications
SGS THOMSON MICROELECTRONICS12 citations74
US5534448AJul 9, 1996
Process for realizing P-channel MOS transistors having a low threshold voltage in semiconductor integrated circuits for analog applications
SGS THOMSON MICROELECTRONICS9 citations74
US5372956ADec 13, 1994
Method for making direct contacts in high density MOS/CMOS processes
SGS THOMSON MICROELECTRONICS7 citations74
US6036566AMar 14, 2000
Method of fabricating flat FED screens
SGS THOMSON MICROELECTRONICS8 citations73
US6000980ADec 14, 1999
Process for fabricating a microtip cathode assembly for a field emission display panel
SGS THOMSON MICROELECTRONICS15 citations67
US6350676B1Feb 26, 2002
Method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers
SGS THOMSON MICROELECTRONICS3 citations63
US5850360ADec 15, 1998
High-voltage N-channel MOS transistor and associated manufacturing process
SGS THOMSON MICROELECTRONICS3 citations63
ST MICROELECTRONICS SRL
12 patentsUS6547151B1Apr 15, 2003
Currency note comprising an integrated circuit
ST MICROELECTRONICS SRL79 citations98
US5231051AJul 27, 1993
Method for formation of contact plugs utilizing etchback
ST MICROELECTRONICS SRL30 citations92
US5793086AAug 11, 1998
NOR-type ROM with LDD cells and process of fabrication
ST MICROELECTRONICS SRL23 citations90
US5407852AApr 18, 1995
Method of making NOR-type ROM with LDD cells
ST MICROELECTRONICS SRL29 citations90
US6399442B1Jun 4, 2002
Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device
ST MICROELECTRONICS SRL6 citations74
US5659501AAug 19, 1997
Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device
ST MICROELECTRONICS SRL7 citations74
US5528536AJun 18, 1996
Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device
ST MICROELECTRONICS SRL6 citations74
US7125808B2Oct 24, 2006
Method for manufacturing non-volatile memory cells on a semiconductor substrate
ST MICROELECTRONICS SRL8 citations71
US5818760AOct 6, 1998
Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device
ST MICROELECTRONICS SRL1 citations63
US6812531B1Nov 2, 2004
Matrix of memory cells fabricated by means of a self-aligned source process, comprising ROM memory cells, and related manufacturing process
ST MICROELECTRONICS SRL6 citations62
US7125807B2Oct 24, 2006
Method for manufacturing non-volatile memory cells on a semiconductor substrate
ST MICROELECTRONICS SRL1 citations49
US6747309B2Jun 8, 2004
Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device
ST MICROELECTRONICS SRL0 citations42
SGS MICROELETTRONICA SPA
4 patentsUS4816883AMar 28, 1989
Nonvolatile, semiconductor memory device
SGS MICROELETTRONICA SPA56 citations96
US4703552ANov 3, 1987
Fabricating a CMOS transistor having low threshold voltages using self-aligned silicide polysilicon gates and silicide interconnect regions
SGS MICROELETTRONICA SPA35 citations91
US4897365AJan 30, 1990
Reduced-beak planox process for the formation of integrated electronic components
SGS MICROELETTRONICA SPA20 citations74
US4806501AFeb 21, 1989
Method for making twin tub CMOS devices
SGS MICROELETTRONICA SPA6 citations61
MICRON TECHNOLOGY INC
4 patentsUS10147497B2Dec 4, 2018
Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
MICRON TECHNOLOGY INC4 citations84
US9048410B2Jun 2, 2015
Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
MICRON TECHNOLOGY INC7 citations84
US10923205B2Feb 16, 2021
Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
MICRON TECHNOLOGY INC2 citations73
US12165723B2Dec 10, 2024
Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
MICRON TECHNOLOGY INC0 citations62