Inventor
FANG YEAN-KUEN
TW31 patents
⚠️ This page may combine multiple inventors who share the name “FANG YEAN-KUEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
11 patentsUS7387907B2Jun 17, 2008
Image sensor with optical guard ring and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG26 citations92
US7122840B2Oct 17, 2006
Image sensor with optical guard ring and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG19 citations92
US6271570B1Aug 7, 2001
Trench-free buried contact
TAIWAN SEMICONDUCTOR MFG6 citations74
US6110822AAug 29, 2000
Method for forming a polysilicon-interconnect contact in a TFT-SRAM
TAIWAN SEMICONDUCTOR MFG15 citations74
US6078087AJun 20, 2000
SRAM memory device with improved performance
TAIWAN SEMICONDUCTOR MFG6 citations74
US5953606ASep 14, 1999
Method for manufacturing a TFT SRAM memory device with improved performance
TAIWAN SEMICONDUCTOR MFG7 citations74
US6291306B1Sep 18, 2001
Method of improving the voltage coefficient of resistance of high polysilicon resistors
TAIWAN SEMICONDUCTOR MFG9 citations72
US7079412B2Jul 18, 2006
Programmable MOS device formed by stressing polycrystalline silicon
TAIWAN SEMICONDUCTOR MFG5 citations63
US6080647AJun 27, 2000
Process to form a trench-free buried contact
TAIWAN SEMICONDUCTOR MFG2 citations63
US6046062AApr 4, 2000
Method to monitor the kink effect
TAIWAN SEMICONDUCTOR MFG5 citations62
US8987113B2Mar 24, 2015
Image sensor including multiple lenses and method of manufacture thereof
TAIWAN SEMICONDUCTOR MFG0 citations52
NAT SCIENCE COUNCIL
10 patentsUS6077760AJun 20, 2000
Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics
NAT SCIENCE COUNCIL94 citations94
US6877385B2Apr 12, 2005
Contact type micro piezoresistive shear-stress sensor
NAT SCIENCE COUNCIL32 citations89
US6161421ADec 19, 2000
Integrated ethanol gas sensor and fabrication method thereof
NAT SCIENCE COUNCIL36 citations88
US6274413B1Aug 14, 2001
Method for fabricating a polysilicon thin film transistor
NAT SCIENCE COUNCIL22 citations84
US5714772AFeb 3, 1998
Method of manufacturing light converter with amorphous-silicon pin heterojunction diode
NAT SCIENCE COUNCIL12 citations70
US6271544B1Aug 7, 2001
SiC/Si heterostructure semiconductor switch and fabrication thereof
NAT SCIENCE COUNCIL8 citations68
US6054747AApr 25, 2000
Integrated photoreceiver having metal-insulator-semiconductor switch
NAT SCIENCE COUNCIL5 citations61
US5838034ANov 17, 1998
Infrared optical bulk channel field effect transistor for greater effectiveness
NAT SCIENCE COUNCIL4 citations61
US5604136AFeb 18, 1997
Method of manufacturing light converter with amorphous-silicon pin heterojunction diode
NAT SCIENCE COUNCIL3 citations59
US6128211AOct 3, 2000
Structures of a low-voltage-operative non-volatile ferroelectric memory device with floating gate
NAT SCIENCE COUNCIL1 citations50
IND TECH RES INST
3 patentsUNIV NAT CHENG KUNG
2 patentsNAT SCIENCE COUNCIL REPUBLIC CHINA
2 patentsUS6225672B1May 1, 2001
High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate
NAT SCIENCE COUNCIL REPUBLIC CHINA3 citations60
US6033985AMar 7, 2000
Contact process interconnect poly-crystal silicon layer in thin film SRAM
NAT SCIENCE COUNCIL REPUBLIC CHINA0 citations49