Inventor
ASAI KAZUYOSHI
JP9 patents
Patents
9 patentsUS5652157AJul 29, 1997
Forming a gate electrode on a semiconductor substrate by using a T-shaped dummy gate
NIPPON TELEGRAPH & TELEPHONE22 citations91
US5639686AJun 17, 1997
Method of fabricating circuit elements on an insulating substrate
NIPPON TELEGRAPH & TELEPHONE29 citations91
US5281769AJan 25, 1994
Dewall plating technique
NIPPON TELEGRAPH & TELEPHONE15 citations81
US4463366AJul 31, 1984
Field effect transistor with combination Schottky-junction gate
NIPPON TELEGRAPH & TELEPHONE22 citations79
US5550068AAug 27, 1996
Process of fabricating a circuit element for transmitting microwave signals
NIPPON TELEGRAPH & TELEPHONE10 citations72
US4327475AMay 4, 1982
Method of manufacturing a FET device disposed in a compound s/c layer on a semi-insulating substrate
NIPPON TELEGRAPH & TELEPHONE13 citations71
US4331967AMay 25, 1982
Field effects semiconductor devices
NIPPON TELEGRAPH & TELEPHONE4 citations60
US5406098AApr 11, 1995
Semiconductor circuit device and method for production thereof
NIPPON TELEGRAPH & TELEPHONE4 citations57
US5369043ANov 29, 1994
Semiconductor circuit device and method for production thereof
NIPPON TELEGRAPH & TELEPHONE3 citations57