Inventor

PETTI CHRISTOPHER

US36 patents

⚠️ This page may combine multiple inventors who share the name “PETTI CHRISTOPHER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PETTI CHRISTOPHER

SANDISK TECHNOLOGIES LLC

Three-dimensional ferroelectric memory device and method of making thereof

Multiplication using non-volatile memory cells

Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same

Magnetoelectric random access memory array and methods of operating the same

Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof

Randomly writable memory device and method of operating thereof

Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereof

Data rewrite during refresh window

Wordline sidewall recess for integrating planar selector device

Three-dimensional phase change memory device having a laterally constricted element and method of making the same

Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof

Memory hole bit line structures

Implementation of VMCO area switching cell to VBL architecture

Barrier modulated cell structures with intrinsic vertical bit line architecture

Three-dimensional memory device including germanium-containing vertical channels and method of making the same

SANDISK 3D LLC

Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same

Dense arrays and charge storage devices

TFT mask ROM and method for making same

Method of fabricating a self-aligning damascene memory structure

Vertical transistor and local interconnect structure

Setting channel voltages of adjustable resistance bit line structures using dummy word lines

Side wall bit line structures

Method of fabricating a self-aligning damascene memory structure

Controlling adjustable resistance bit lines connected to word line combs

High endurance non-volatile storage

SANDISK TECHNOLOGIES INC

Multi tier three-dimensional memory devices including vertically shared bit lines

Vertical NAND and method of making thereof using sequential stack etching and landing pad

Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Implementation of VMCO area switching cell to VBL architecture

MATRIX SEMICONDUCTOR INC

Method for fabricating programmable memory array structures incorporating series-connected transistor strings

TFT mask ROM and method for making same

WESTERN DIGITAL TECH INC

Selecting reversible resistance memory cells based on initial resistance switching

Bonded memory MRAM arrays sharing a common driver circuit and methods of making the same

SANDISK CORP

TFT mask ROM and method for making same

HSIA KANG-JAY

Method of fabricating a self-aligning damascene memory structure

CYPRESS SEMICONDUCTOR CORP

6-bulk transistor static memory cell using split wordline architecture