Inventor
WU BEING S
US4 patents
Patents
4 patentsUS5567635AOct 22, 1996
Method of making a three dimensional trench EEPROM cell structure
IBM172 citations97
US5315142AMay 24, 1994
High performance trench EEPROM cell
IBM154 citations97
US5331188AJul 19, 1994
Non-volatile DRAM cell
IBM84 citations95
US5389567AFeb 14, 1995
Method of forming a non-volatile DRAM cell
IBM37 citations92