Inventor
HUANG JENN-HWA
US51 patents
⚠️ This page may combine multiple inventors who share the name “HUANG JENN-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
27 patentsUS6441449B1Aug 27, 2002
MEMS variable capacitor with stabilized electrostatic drive and method therefor
MOTOROLA INC82 citations98
US6384353B1May 7, 2002
Micro-electromechanical system device
MOTOROLA INC358 citations98
US6307169B1Oct 23, 2001
Micro-electromechanical switch
MOTOROLA INC237 citations98
US6156611ADec 5, 2000
Method of fabricating vertical FET with sidewall gate electrode
MOTOROLA INC194 citations98
US5606184AFeb 25, 1997
Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making
MOTOROLA INC70 citations96
US5480829AJan 2, 1996
Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts
MOTOROLA INC93 citations96
US5060031AOct 22, 1991
Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices
MOTOROLA INC63 citations96
US5700703ADec 23, 1997
Method of fabricating buried control elements in semiconductor devices
MOTOROLA INC77 citations95
US6794101B2Sep 21, 2004
Micro-electro-mechanical device and method of making
MOTOROLA INC53 citations94
US6309918B1Oct 30, 2001
Manufacturable GaAs VFET process
MOTOROLA INC73 citations94
US5116774AMay 26, 1992
Heterojunction method and structure
MOTOROLA INC29 citations93
US6362018B1Mar 26, 2002
Method for fabricating MEMS variable capacitor with stabilized electrostatic drive
MOTOROLA INC28 citations92
US6091621AJul 18, 2000
Non-volatile multistate memory cell using a ferroelectric gate fet
MOTOROLA INC44 citations92
US6057566AMay 2, 2000
Semiconductor device
MOTOROLA INC24 citations92
US5742082AApr 21, 1998
Stable FET with shielding region in the substrate
MOTOROLA INC46 citations92
US5739557AApr 14, 1998
Refractory gate heterostructure field effect transistor
MOTOROLA INC26 citations88
US6479843B2Nov 12, 2002
Single supply HFET with temperature compensation
MOTOROLA INC15 citations79
US6606017B1Aug 12, 2003
Switchable and tunable coplanar waveguide filters
MOTOROLA INC11 citations74
US5880029AMar 9, 1999
Method of passivating semiconductor devices and the passivated devices
MOTOROLA INC12 citations74
US5831295ANov 3, 1998
Current confinement via defect generator and hetero-interface interaction
MOTOROLA INC12 citations74
US6262451B1Jul 17, 2001
Electrode structure for transistors, non-volatile memories and the like
MOTOROLA INC14 citations73
US5719088AFeb 17, 1998
Method of fabricating semiconductor devices with a passivated surface
MOTOROLA INC11 citations73
US5733827AMar 31, 1998
Method of fabricating semiconductor devices with a passivated surface
MOTOROLA INC8 citations72
US4914049AApr 3, 1990
Method of fabricating a heterojunction bipolar transistor
MOTOROLA INC12 citations72
US5856684AJan 5, 1999
High power HFET with improved channel interfaces
MOTOROLA INC3 citations63
US5411903AMay 2, 1995
Self-aligned complementary HFETS
MOTOROLA INC6 citations62
US6459344B1Oct 1, 2002
Switch assembly and method of forming the same
MOTOROLA INC4 citations57
NXP USA INC
8 patentsUS10741496B2Aug 11, 2020
Semiconductor devices with a protection layer and methods of fabrication
NXP USA INC4 citations71
US10403718B2Sep 3, 2019
Semiconductor devices with regrown contacts and methods of fabrication
NXP USA INC3 citations71
US10355085B1Jul 16, 2019
Semiconductor devices with regrown contacts and methods of fabrication
NXP USA INC3 citations71
US10644142B2May 5, 2020
Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
NXP USA INC4 citations70
US10971613B2Apr 6, 2021
Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
NXP USA INC0 citations59
US10957790B2Mar 23, 2021
Semiconductor device with selectively etched surface passivation
NXP USA INC1 citations56
US10692976B2Jun 23, 2020
GaN-on-Si switch devices
NXP USA INC0 citations51
US9893156B2Feb 13, 2018
Segmented field plate structure
NXP USA INC0 citations50
FREESCALE SEMICONDUCTOR INC
6 patentsUS9799760B2Oct 24, 2017
Semiconductor device with selectively etched surface passivation
FREESCALE SEMICONDUCTOR INC17 citations92
US9871107B2Jan 16, 2018
Device with a conductive feature formed over a cavity and method therefor
FREESCALE SEMICONDUCTOR INC8 citations82
US9425267B2Aug 23, 2016
Transistor with charge enhanced field plate structure and method
FREESCALE SEMICONDUCTOR INC4 citations72
US7868393B2Jan 11, 2011
Space efficient integrated circuit with passive devices
FREESCALE SEMICONDUCTOR INC2 citations61
US9972703B2May 15, 2018
Transistor with charge enhanced field plate structure and method
FREESCALE SEMICONDUCTOR INC0 citations51
US9647075B2May 9, 2017
Segmented field plate structure
FREESCALE SEMICONDUCTOR INC0 citations50
HUANG JENN HWA
4 patentsUS8304271B2Nov 6, 2012
Integrated circuit having a bulk acoustic wave device and a transistor
HUANG JENN HWA114 citations97
US8836133B2Sep 16, 2014
Chip-level humidity protection
HUANG JENN HWA11 citations81
US9601638B2Mar 21, 2017
GaN-on-Si switch devices
HUANG JENN HWA3 citations71
US8319310B2Nov 27, 2012
Field effect transistor gate process and structure
HUANG JENN HWA2 citations62
GREEN BRUCE M
4 patentsUS8946776B2Feb 3, 2015
Semiconductor device with selectively etched surface passivation
GREEN BRUCE M6 citations84
US8653558B2Feb 18, 2014
Semiconductor device and method of making
GREEN BRUCE M4 citations72
US9153448B2Oct 6, 2015
Semiconductor device with selectively etched surface passivation
GREEN BRUCE M2 citations62
US9111868B2Aug 18, 2015
Semiconductor device with selectively etched surface passivation
GREEN BRUCE M2 citations62
(unassigned)
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