P

Inventor

HUANG JENN-HWA

US51 patents
⚠️ This page may combine multiple inventors who share the name “HUANG JENN-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOTOROLA INC

27 patents
US6441449B1Aug 27, 2002

MEMS variable capacitor with stabilized electrostatic drive and method therefor

MOTOROLA INC82 citations98
US6384353B1May 7, 2002

Micro-electromechanical system device

MOTOROLA INC358 citations98
US6307169B1Oct 23, 2001

Micro-electromechanical switch

MOTOROLA INC237 citations98
US6156611ADec 5, 2000

Method of fabricating vertical FET with sidewall gate electrode

MOTOROLA INC194 citations98
US5606184AFeb 25, 1997

Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making

MOTOROLA INC70 citations96
US5480829AJan 2, 1996

Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts

MOTOROLA INC93 citations96
US5060031AOct 22, 1991

Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices

MOTOROLA INC63 citations96
US5700703ADec 23, 1997

Method of fabricating buried control elements in semiconductor devices

MOTOROLA INC77 citations95
US6794101B2Sep 21, 2004

Micro-electro-mechanical device and method of making

MOTOROLA INC53 citations94
US6309918B1Oct 30, 2001

Manufacturable GaAs VFET process

MOTOROLA INC73 citations94
US5116774AMay 26, 1992

Heterojunction method and structure

MOTOROLA INC29 citations93
US6362018B1Mar 26, 2002

Method for fabricating MEMS variable capacitor with stabilized electrostatic drive

MOTOROLA INC28 citations92
US6091621AJul 18, 2000

Non-volatile multistate memory cell using a ferroelectric gate fet

MOTOROLA INC44 citations92
US6057566AMay 2, 2000

Semiconductor device

MOTOROLA INC24 citations92
US5742082AApr 21, 1998

Stable FET with shielding region in the substrate

MOTOROLA INC46 citations92
US5739557AApr 14, 1998

Refractory gate heterostructure field effect transistor

MOTOROLA INC26 citations88
US6479843B2Nov 12, 2002

Single supply HFET with temperature compensation

MOTOROLA INC15 citations79
US6606017B1Aug 12, 2003

Switchable and tunable coplanar waveguide filters

MOTOROLA INC11 citations74
US5880029AMar 9, 1999

Method of passivating semiconductor devices and the passivated devices

MOTOROLA INC12 citations74
US5831295ANov 3, 1998

Current confinement via defect generator and hetero-interface interaction

MOTOROLA INC12 citations74
US6262451B1Jul 17, 2001

Electrode structure for transistors, non-volatile memories and the like

MOTOROLA INC14 citations73
US5719088AFeb 17, 1998

Method of fabricating semiconductor devices with a passivated surface

MOTOROLA INC11 citations73
US5733827AMar 31, 1998

Method of fabricating semiconductor devices with a passivated surface

MOTOROLA INC8 citations72
US4914049AApr 3, 1990

Method of fabricating a heterojunction bipolar transistor

MOTOROLA INC12 citations72
US5856684AJan 5, 1999

High power HFET with improved channel interfaces

MOTOROLA INC3 citations63
US5411903AMay 2, 1995

Self-aligned complementary HFETS

MOTOROLA INC6 citations62
US6459344B1Oct 1, 2002

Switch assembly and method of forming the same

MOTOROLA INC4 citations57

NXP USA INC

8 patents

FREESCALE SEMICONDUCTOR INC

6 patents

HUANG JENN HWA

4 patents

GREEN BRUCE M

4 patents

(unassigned)

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.