Inventor
YIN GERALD ZHEYAO
US41 patents
⚠️ This page may combine multiple inventors who share the name “YIN GERALD ZHEYAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
35 patentsUS6528751B1Mar 4, 2003
Plasma reactor with overhead RF electrode tuned to the plasma
APPLIED MATERIALS INC266 citations99
US6120640ASep 19, 2000
Boron carbide parts and coatings in a plasma reactor
APPLIED MATERIALS INC348 citations99
US5730801AMar 24, 1998
Compartnetalized substrate processing chamber
APPLIED MATERIALS INC836 citations99
US5710486AJan 20, 1998
Inductively and multi-capacitively coupled plasma reactor
APPLIED MATERIALS INC139 citations99
US7030335B2Apr 18, 2006
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
APPLIED MATERIALS INC72 citations98
US6699399B1Mar 2, 2004
Self-cleaning etch process
APPLIED MATERIALS INC500 citations98
US6518195B1Feb 11, 2003
Plasma reactor using inductive RF coupling, and processes
APPLIED MATERIALS INC162 citations98
US6189484B1Feb 20, 2001
Plasma reactor having a helicon wave high density plasma source
APPLIED MATERIALS INC116 citations98
US6136211AOct 24, 2000
Self-cleaning etch process
APPLIED MATERIALS INC160 citations98
US5885358AMar 23, 1999
Gas injection slit nozzle for a plasma process reactor
APPLIED MATERIALS INC203 citations98
US5756400AMay 26, 1998
Method and apparatus for cleaning by-products from plasma chamber surfaces
APPLIED MATERIALS INC407 citations98
US5746875AMay 5, 1998
Gas injection slit nozzle for a plasma process reactor
APPLIED MATERIALS INC169 citations98
US5643394AJul 1, 1997
Gas injection slit nozzle for a plasma process reactor
APPLIED MATERIALS INC215 citations98
US6949203B2Sep 27, 2005
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
APPLIED MATERIALS INC69 citations97
US6488807B1Dec 3, 2002
Magnetic confinement in a plasma reactor having an RF bias electrode
APPLIED MATERIALS INC145 citations97
US6387287B1May 14, 2002
Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
APPLIED MATERIALS INC94 citations97
US6379575B1Apr 30, 2002
Treatment of etching chambers using activated cleaning gas
APPLIED MATERIALS INC375 citations97
US6251792B1Jun 26, 2001
Plasma etch processes
APPLIED MATERIALS INC122 citations97
US5900062AMay 4, 1999
Lift pin for dechucking substrates
APPLIED MATERIALS INC102 citations97
US6218312B1Apr 17, 2001
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC61 citations96
US6030486AFeb 29, 2000
Magnetically confined plasma reactor for processing a semiconductor wafer
APPLIED MATERIALS INC55 citations96
US6020686AFeb 1, 2000
Inductively and multi-capacitively coupled plasma reactor
APPLIED MATERIALS INC52 citations96
US5897712AApr 27, 1999
Plasma uniformity control for an inductive plasma source
APPLIED MATERIALS INC63 citations96
US5891348AApr 6, 1999
Process gas focusing apparatus and method
APPLIED MATERIALS INC61 citations96
US5883017AMar 16, 1999
Compartmentalized substrate processing chamber
APPLIED MATERIALS INC73 citations96
US5817534AOct 6, 1998
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
APPLIED MATERIALS INC94 citations96
US5753044AMay 19, 1998
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC91 citations95
US5783101AJul 21, 1998
High etch rate residue free metal etch process with low frequency high power inductive coupled plasma
APPLIED MATERIALS INC21 citations93
US6500357B1Dec 31, 2002
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
APPLIED MATERIALS INC38 citations92
US6440866B1Aug 27, 2002
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC22 citations92
US6036877AMar 14, 2000
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC30 citations92
US5965463AOct 12, 1999
Silane etching process
APPLIED MATERIALS INC44 citations92
US5777289AJul 7, 1998
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC35 citations92
US6270687B1Aug 7, 2001
RF plasma method
APPLIED MATERIALS INC42 citations91
US6248250B1Jun 19, 2001
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC29 citations91