Inventor
ROBERTS JOHN CLAASSEN
US14 patents
⚠️ This page may combine multiple inventors who share the name “ROBERTS JOHN CLAASSEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NITRONEX CORP
4 patentsUS7247889B2Jul 24, 2007
III-nitride material structures including silicon substrates
NITRONEX CORP83 citations97
US7352015B2Apr 1, 2008
Gallium nitride materials and methods associated with the same
NITRONEX CORP17 citations92
US7352016B2Apr 1, 2008
Gallium nitride material transistors and methods associated with the same
NITRONEX CORP23 citations91
US7569871B2Aug 4, 2009
Gallium nitride material transistors and methods associated with the same
NITRONEX CORP3 citations61
M/A-COM TECH SOLUTIONS HOLDINGS INC
4 patentsUS9673281B2Jun 6, 2017
Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
M/A-COM TECH SOLUTIONS HOLDINGS INC6 citations83
US9627473B2Apr 18, 2017
Parasitic channel mitigation in III-nitride material semiconductor structures
M/A-COM TECH SOLUTIONS HOLDINGS INC9 citations82
US9773898B2Sep 26, 2017
III-nitride semiconductor structures comprising spatially patterned implanted species
M/A-COM TECH SOLUTIONS HOLDINGS INC5 citations72
US9704705B2Jul 11, 2017
Parasitic channel mitigation via reaction with active species
M/A-COM TECH SOLUTIONS HOLDINGS INC3 citations70
MACOM TECH SOLUTIONS HOLDINGS INC
3 patentsUS9799520B2Oct 24, 2017
Parasitic channel mitigation via back side implantation
MACOM TECH SOLUTIONS HOLDINGS INC4 citations72
US11018220B2May 25, 2021
Device isolation design rules for HAST improvement
MACOM TECH SOLUTIONS HOLDINGS INC0 citations62
US10211294B2Feb 19, 2019
III-nitride semiconductor structures comprising low atomic mass species
MACOM TECH SOLUTIONS HOLDINGS INC1 citations60
UNIV NORTH CAROLINA STATE
2 patentsUS5851905ADec 22, 1998
Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows
UNIV NORTH CAROLINA STATE160 citations95
US5684309ANov 4, 1997
Stacked quantum well aluminum indium gallium nitride light emitting diodes
UNIV NORTH CAROLINA STATE471 citations95