Inventor
VILLA CORRADO
IT80 patents
⚠️ This page may combine multiple inventors who share the name “VILLA CORRADO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
23 patentsUS9754648B2Sep 5, 2017
Apparatuses and methods for memory operations having variable latencies
MICRON TECHNOLOGY INC23 citations94
US9607665B2Mar 28, 2017
Providing power availability information to memory
MICRON TECHNOLOGY INC10 citations93
US9343116B2May 17, 2016
Providing power availability information to memory
MICRON TECHNOLOGY INC11 citations93
US9740485B2Aug 22, 2017
Apparatuses and methods for memory operations having variable latencies
MICRON TECHNOLOGY INC14 citations91
US11250889B2Feb 15, 2022
Providing power availability information to memory
MICRON TECHNOLOGY INC3 citations84
US10796731B2Oct 6, 2020
Providing power availability information to memory
MICRON TECHNOLOGY INC3 citations84
US10424347B2Sep 24, 2019
Providing power availability information to memory
MICRON TECHNOLOGY INC5 citations84
US10163472B2Dec 25, 2018
Apparatuses and methods for memory operations having variable latencies
MICRON TECHNOLOGY INC7 citations84
US9905275B2Feb 27, 2018
Providing power availability information to memory
MICRON TECHNOLOGY INC8 citations84
US9685234B2Jun 20, 2017
Apparatuses and methods for performing multiple memory operations
MICRON TECHNOLOGY INC10 citations84
US10067764B2Sep 4, 2018
Apparatuses and methods for memory operations having variable latencies
MICRON TECHNOLOGY INC6 citations83
US11749316B2Sep 5, 2023
Providing power availability information to memory
MICRON TECHNOLOGY INC2 citations73
US11538522B1Dec 27, 2022
Systems and methods for adaptive self-referenced reads of memory devices
MICRON TECHNOLOGY INC3 citations73
US11158673B2Oct 26, 2021
Vertical 3D memory device and method for manufacturing the same
MICRON TECHNOLOGY INC2 citations73
US10991411B2Apr 27, 2021
Method and apparatuses for performing a voltage adjustment operation on a section of memory cells based on a quantity of access operations
MICRON TECHNOLOGY INC2 citations73
US10885957B2Jan 5, 2021
Apparatuses and methods for memory operations having variable latencies
MICRON TECHNOLOGY INC1 citations73
US10566040B2Feb 18, 2020
Variable page size architecture
MICRON TECHNOLOGY INC2 citations73
US10418085B2Sep 17, 2019
Memory plate segmentation to reduce operating power
MICRON TECHNOLOGY INC3 citations73
US10068649B2Sep 4, 2018
Apparatuses and methods for performing multiple memory operations
MICRON TECHNOLOGY INC3 citations73
US12469534B2Nov 11, 2025
Variable page size architecture
MICRON TECHNOLOGY INC0 citations63
US12051463B2Jul 30, 2024
Decoder architecture for memory device
MICRON TECHNOLOGY INC0 citations63
US11961588B2Apr 16, 2024
Variable page size architecture
MICRON TECHNOLOGY INC0 citations63
US11887664B2Jan 30, 2024
Systems and methods for adaptive self-referenced reads of memory devices
MICRON TECHNOLOGY INC0 citations63
SGS THOMSON MICROELECTRONICS
13 patentsUS5258959ANov 2, 1993
Memory cell reading circuit
SGS THOMSON MICROELECTRONICS25 citations93
US4922402AMay 1, 1990
CMOS voltage multiplier
SGS THOMSON MICROELECTRONICS27 citations93
US5822247AOct 13, 1998
Device for generating and regulating a gate voltage in a non-volatile memory
SGS THOMSON MICROELECTRONICS28 citations92
US5784319AJul 21, 1998
Method for erasing an electrically programmable and erasable non-volatile memory cell
SGS THOMSON MICROELECTRONICS30 citations92
US5719807AFeb 17, 1998
Flash EEPROM with controlled discharge time of the word lines and source potentials after erase
SGS THOMSON MICROELECTRONICS21 citations92
US5721707AFeb 24, 1998
Erase voltage control circuit for an electrically erasable non-volatile memory cell
SGS THOMSON MICROELECTRONICS17 citations83
US4933827AJun 12, 1990
Regulation of the output voltage of a voltage multiplier
SGS THOMSON MICROELECTRONICS21 citations82
USRE35121EDec 12, 1995
Regulation of the output voltage of a voltage multiplier
SGS THOMSON MICROELECTRONICS15 citations74
US6040734AMar 21, 2000
Supply voltages switch circuit
SGS THOMSON MICROELECTRONICS9 citations73
US5854764ADec 29, 1998
Sectorized electrically erasable and programmable non-volatile memory device with redundancy
SGS THOMSON MICROELECTRONICS7 citations73
US5659502AAug 19, 1997
Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices
SGS THOMSON MICROELECTRONICS13 citations73
US4956569ASep 11, 1990
CMOS logic circuit for high voltage operation
SGS THOMSON MICROELECTRONICS14 citations73
US5886949AMar 23, 1999
Method and circuit for generating a synchronizing ATD signal
SGS THOMSON MICROELECTRONICS10 citations72
ST MICROELECTRONICS SRL
12 patentsUS5917753AJun 29, 1999
Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells
ST MICROELECTRONICS SRL48 citations96
US7023738B2Apr 4, 2006
Full-swing wordline driving circuit
ST MICROELECTRONICS SRL21 citations92
US6483750B2Nov 19, 2002
Flash EEPROM with on-chip erase source voltage generator
ST MICROELECTRONICS SRL20 citations92
US6055187AApr 25, 2000
Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells
ST MICROELECTRONICS SRL44 citations92
US5999450ADec 7, 1999
Electrically erasable and programmable non-volatile memory device with testable redundancy circuits
ST MICROELECTRONICS SRL44 citations92
US5999456ADec 7, 1999
Flash EEPROM with controlled discharge time of the word lines and source potentials after erase
ST MICROELECTRONICS SRL35 citations92
US5638327AJun 10, 1997
Flash-EEPROM memory array and method for biasing the same
ST MICROELECTRONICS SRL49 citations92
US7154803B2Dec 26, 2006
Redundancy scheme for a memory integrated circuit
ST MICROELECTRONICS SRL11 citations84
US6195290B1Feb 27, 2001
Method of avoiding disturbance during the step of programming and erasing an electrically programmable, semiconductor non-volatile storage device
ST MICROELECTRONICS SRL16 citations84
US7149844B2Dec 12, 2006
Non-volatile memory device
ST MICROELECTRONICS SRL16 citations83
US6195291B1Feb 27, 2001
Flash EEPROM with on-chip erase source voltage generator
ST MICROELECTRONICS SRL13 citations73
US5920505AJul 6, 1999
Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices
ST MICROELECTRONICS SRL12 citations73
VILLA CORRADO
1 patentLODESTAR LICENSING GROUP LLC
1 patentShowing the top 50 of 80 patents by PatentIndex Score.