P

Inventor

VILLA CORRADO

IT80 patents
⚠️ This page may combine multiple inventors who share the name “VILLA CORRADO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

23 patents
US9754648B2Sep 5, 2017

Apparatuses and methods for memory operations having variable latencies

MICRON TECHNOLOGY INC23 citations94
US9607665B2Mar 28, 2017

Providing power availability information to memory

MICRON TECHNOLOGY INC10 citations93
US9343116B2May 17, 2016

Providing power availability information to memory

MICRON TECHNOLOGY INC11 citations93
US9740485B2Aug 22, 2017

Apparatuses and methods for memory operations having variable latencies

MICRON TECHNOLOGY INC14 citations91
US11250889B2Feb 15, 2022

Providing power availability information to memory

MICRON TECHNOLOGY INC3 citations84
US10796731B2Oct 6, 2020

Providing power availability information to memory

MICRON TECHNOLOGY INC3 citations84
US10424347B2Sep 24, 2019

Providing power availability information to memory

MICRON TECHNOLOGY INC5 citations84
US10163472B2Dec 25, 2018

Apparatuses and methods for memory operations having variable latencies

MICRON TECHNOLOGY INC7 citations84
US9905275B2Feb 27, 2018

Providing power availability information to memory

MICRON TECHNOLOGY INC8 citations84
US9685234B2Jun 20, 2017

Apparatuses and methods for performing multiple memory operations

MICRON TECHNOLOGY INC10 citations84
US10067764B2Sep 4, 2018

Apparatuses and methods for memory operations having variable latencies

MICRON TECHNOLOGY INC6 citations83
US11749316B2Sep 5, 2023

Providing power availability information to memory

MICRON TECHNOLOGY INC2 citations73
US11538522B1Dec 27, 2022

Systems and methods for adaptive self-referenced reads of memory devices

MICRON TECHNOLOGY INC3 citations73
US11158673B2Oct 26, 2021

Vertical 3D memory device and method for manufacturing the same

MICRON TECHNOLOGY INC2 citations73
US10991411B2Apr 27, 2021

Method and apparatuses for performing a voltage adjustment operation on a section of memory cells based on a quantity of access operations

MICRON TECHNOLOGY INC2 citations73
US10885957B2Jan 5, 2021

Apparatuses and methods for memory operations having variable latencies

MICRON TECHNOLOGY INC1 citations73
US10566040B2Feb 18, 2020

Variable page size architecture

MICRON TECHNOLOGY INC2 citations73
US10418085B2Sep 17, 2019

Memory plate segmentation to reduce operating power

MICRON TECHNOLOGY INC3 citations73
US10068649B2Sep 4, 2018

Apparatuses and methods for performing multiple memory operations

MICRON TECHNOLOGY INC3 citations73
US12469534B2Nov 11, 2025

Variable page size architecture

MICRON TECHNOLOGY INC0 citations63
US12051463B2Jul 30, 2024

Decoder architecture for memory device

MICRON TECHNOLOGY INC0 citations63
US11961588B2Apr 16, 2024

Variable page size architecture

MICRON TECHNOLOGY INC0 citations63
US11887664B2Jan 30, 2024

Systems and methods for adaptive self-referenced reads of memory devices

MICRON TECHNOLOGY INC0 citations63

SGS THOMSON MICROELECTRONICS

13 patents
US5258959ANov 2, 1993

Memory cell reading circuit

SGS THOMSON MICROELECTRONICS25 citations93
US4922402AMay 1, 1990

CMOS voltage multiplier

SGS THOMSON MICROELECTRONICS27 citations93
US5822247AOct 13, 1998

Device for generating and regulating a gate voltage in a non-volatile memory

SGS THOMSON MICROELECTRONICS28 citations92
US5784319AJul 21, 1998

Method for erasing an electrically programmable and erasable non-volatile memory cell

SGS THOMSON MICROELECTRONICS30 citations92
US5719807AFeb 17, 1998

Flash EEPROM with controlled discharge time of the word lines and source potentials after erase

SGS THOMSON MICROELECTRONICS21 citations92
US5721707AFeb 24, 1998

Erase voltage control circuit for an electrically erasable non-volatile memory cell

SGS THOMSON MICROELECTRONICS17 citations83
US4933827AJun 12, 1990

Regulation of the output voltage of a voltage multiplier

SGS THOMSON MICROELECTRONICS21 citations82
USRE35121EDec 12, 1995

Regulation of the output voltage of a voltage multiplier

SGS THOMSON MICROELECTRONICS15 citations74
US6040734AMar 21, 2000

Supply voltages switch circuit

SGS THOMSON MICROELECTRONICS9 citations73
US5854764ADec 29, 1998

Sectorized electrically erasable and programmable non-volatile memory device with redundancy

SGS THOMSON MICROELECTRONICS7 citations73
US5659502AAug 19, 1997

Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices

SGS THOMSON MICROELECTRONICS13 citations73
US4956569ASep 11, 1990

CMOS logic circuit for high voltage operation

SGS THOMSON MICROELECTRONICS14 citations73
US5886949AMar 23, 1999

Method and circuit for generating a synchronizing ATD signal

SGS THOMSON MICROELECTRONICS10 citations72

ST MICROELECTRONICS SRL

12 patents
US5917753AJun 29, 1999

Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells

ST MICROELECTRONICS SRL48 citations96
US7023738B2Apr 4, 2006

Full-swing wordline driving circuit

ST MICROELECTRONICS SRL21 citations92
US6483750B2Nov 19, 2002

Flash EEPROM with on-chip erase source voltage generator

ST MICROELECTRONICS SRL20 citations92
US6055187AApr 25, 2000

Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells

ST MICROELECTRONICS SRL44 citations92
US5999450ADec 7, 1999

Electrically erasable and programmable non-volatile memory device with testable redundancy circuits

ST MICROELECTRONICS SRL44 citations92
US5999456ADec 7, 1999

Flash EEPROM with controlled discharge time of the word lines and source potentials after erase

ST MICROELECTRONICS SRL35 citations92
US5638327AJun 10, 1997

Flash-EEPROM memory array and method for biasing the same

ST MICROELECTRONICS SRL49 citations92
US7154803B2Dec 26, 2006

Redundancy scheme for a memory integrated circuit

ST MICROELECTRONICS SRL11 citations84
US6195290B1Feb 27, 2001

Method of avoiding disturbance during the step of programming and erasing an electrically programmable, semiconductor non-volatile storage device

ST MICROELECTRONICS SRL16 citations84
US7149844B2Dec 12, 2006

Non-volatile memory device

ST MICROELECTRONICS SRL16 citations83
US6195291B1Feb 27, 2001

Flash EEPROM with on-chip erase source voltage generator

ST MICROELECTRONICS SRL13 citations73
US5920505AJul 6, 1999

Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices

ST MICROELECTRONICS SRL12 citations73

VILLA CORRADO

1 patent

LODESTAR LICENSING GROUP LLC

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.