Inventor
HUANG JULIE
TW12 patents
⚠️ This page may combine multiple inventors who share the name “HUANG JULIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
10 patentsUS5668035ASep 16, 1997
Method for fabricating a dual-gate dielectric module for memory with embedded logic technology
TAIWAN SEMICONDUCTOR MFG127 citations95
US5885865AMar 23, 1999
Method for making low-topography buried capacitor by a two stage etching process and device made
TAIWAN SEMICONDUCTOR MFG29 citations92
US5783462AJul 21, 1998
Method of making an external contact to a MOSFET drain for testing of stacked-capacitor DRAMS
TAIWAN SEMICONDUCTOR MFG24 citations92
US5943582AAug 24, 1999
Method for forming DRAM stacked capacitor
TAIWAN SEMICONDUCTOR MFG26 citations91
US5846860ADec 8, 1998
Method of making buried contact in DRAM technology
TAIWAN SEMICONDUCTOR MFG19 citations83
US5877092AMar 2, 1999
Method for edge profile and design rules control
TAIWAN SEMICONDUCTOR MFG17 citations82
US6184076B1Feb 6, 2001
DRAM contact process by localized etch-stop removal
TAIWAN SEMICONDUCTOR MFG9 citations73
US5946569AAug 31, 1999
DRAM contact process by localized etch-stop removal
TAIWAN SEMICONDUCTOR MFG10 citations73
US5736450AApr 7, 1998
Method for forming a cylindrical capacitor
TAIWAN SEMICONDUCTOR MFG11 citations73
US5723374AMar 3, 1998
Method for forming dielectric spacer to prevent poly stringer in stacked capacitor DRAM technology
TAIWAN SEMICONDUCTOR MFG11 citations73