Inventor
YING TSE-LIANG
TW26 patents
⚠️ This page may combine multiple inventors who share the name “YING TSE-LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
21 patentsUS6162686ADec 19, 2000
Method for forming a fuse in integrated circuit application
TAIWAN SEMICONDUCTOR MFG87 citations98
US6080637AJun 27, 2000
Shallow trench isolation technology to eliminate a kink effect
TAIWAN SEMICONDUCTOR MFG88 citations98
US6037222AMar 14, 2000
Method for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technology
TAIWAN SEMICONDUCTOR MFG148 citations98
US6168984B1Jan 2, 2001
Reduction of the aspect ratio of deep contact holes for embedded DRAM devices
TAIWAN SEMICONDUCTOR MFG61 citations96
US6194234B1Feb 27, 2001
Method to evaluate hemisperical grain (HSG) polysilicon surface
TAIWAN SEMICONDUCTOR MFG23 citations93
US6373369B2Apr 16, 2002
High efficiency thin film inductor
TAIWAN SEMICONDUCTOR MFG30 citations92
US6307213B1Oct 23, 2001
Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TAIWAN SEMICONDUCTOR MFG31 citations92
US6287939B1Sep 11, 2001
Method for fabricating a shallow trench isolation which is not susceptible to buried contact trench formation
TAIWAN SEMICONDUCTOR MFG25 citations92
US6214715B1Apr 10, 2001
Method for fabricating a self aligned contact which eliminates the key hole problem using a two step spacer deposition
TAIWAN SEMICONDUCTOR MFG37 citations92
US6121073ASep 19, 2000
Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TAIWAN SEMICONDUCTOR MFG40 citations92
US5922515AJul 13, 1999
Approaches to integrate the deep contact module
TAIWAN SEMICONDUCTOR MFG20 citations92
US5885865AMar 23, 1999
Method for making low-topography buried capacitor by a two stage etching process and device made
TAIWAN SEMICONDUCTOR MFG29 citations92
US5811331ASep 22, 1998
Formation of a stacked cylindrical capacitor module in the DRAM technology
TAIWAN SEMICONDUCTOR MFG23 citations92
US5753547AMay 19, 1998
Formation of a cylindrical polysilicon module in dram technology
TAIWAN SEMICONDUCTOR MFG43 citations92
US6207492B1Mar 27, 2001
Common gate and salicide word line process for low cost embedded DRAM devices
TAIWAN SEMICONDUCTOR MFG17 citations84
US6187659B1Feb 13, 2001
Node process integration technology to improve data retention for logic based embedded dram
TAIWAN SEMICONDUCTOR MFG17 citations84
US6433665B2Aug 13, 2002
High efficiency thin film inductor
TAIWAN SEMICONDUCTOR MFG9 citations74
US6278352B1Aug 21, 2001
High efficiency thin film inductor
TAIWAN SEMICONDUCTOR MFG12 citations74
US6174802B1Jan 16, 2001
Method for fabricating a self aligned contact which eliminates the key hole problem using a two step contact deposition
TAIWAN SEMICONDUCTOR MFG7 citations74
US5946596AAug 31, 1999
Method for preventing polycide line deformation by polycide hardening
TAIWAN SEMICONDUCTOR MFG7 citations74
US6306767B1Oct 23, 2001
Self-aligned etching method for forming high areal density patterned microelectronic structures
TAIWAN SEMICONDUCTOR MFG2 citations62