P

Inventor

SHIH JIAW-REN

TW63 patents
⚠️ This page may combine multiple inventors who share the name “SHIH JIAW-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

44 patents
US6207532B1Mar 27, 2001

STI process for improving isolation for deep sub-micron application

TAIWAN SEMICONDUCTOR MFG175 citations99
US6614693B1Sep 2, 2003

Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM

TAIWAN SEMICONDUCTOR MFG77 citations98
US6268992B1Jul 31, 2001

Displacement current trigger SCR

TAIWAN SEMICONDUCTOR MFG48 citations96
US6214670B1Apr 10, 2001

Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance

TAIWAN SEMICONDUCTOR MFG68 citations96
US6122201ASep 19, 2000

Clipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROM

TAIWAN SEMICONDUCTOR MFG79 citations96
US6097066AAug 1, 2000

Electro-static discharge protection structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG77 citations96
US6937457B2Aug 30, 2005

Decoupling capacitor

TAIWAN SEMICONDUCTOR MFG37 citations93
US6362035B1Mar 26, 2002

Channel stop ion implantation method for CMOS integrated circuits

TAIWAN SEMICONDUCTOR MFG26 citations93
US6323523B1Nov 27, 2001

N-type structure for n-type pull-up and down I/O protection circuit

TAIWAN SEMICONDUCTOR MFG25 citations93
US6306695B1Oct 23, 2001

Modified source side inserted anti-type diffusion ESD protection device

TAIWAN SEMICONDUCTOR MFG20 citations93
US6277723B1Aug 21, 2001

Plasma damage protection cell using floating N/P/N and P/N/P structure

TAIWAN SEMICONDUCTOR MFG24 citations93
US6271999B1Aug 7, 2001

ESD protection circuit for different power supplies

TAIWAN SEMICONDUCTOR MFG17 citations93
US6249414B1Jun 19, 2001

Displacement current trigger SCR

TAIWAN SEMICONDUCTOR MFG32 citations93
US6190954B1Feb 20, 2001

Robust latchup-immune CMOS structure

TAIWAN SEMICONDUCTOR MFG36 citations93
US6171891B1Jan 9, 2001

Method of manufacture of CMOS device using additional implant regions to enhance ESD performance

TAIWAN SEMICONDUCTOR MFG32 citations93
US5891792AApr 6, 1999

ESD device protection structure and process with high tilt angle GE implant

TAIWAN SEMICONDUCTOR MFG28 citations93
US6614078B2Sep 2, 2003

Highly latchup-immune CMOS I/O structures

TAIWAN SEMICONDUCTOR MFG21 citations92
US6420221B1Jul 16, 2002

Method of manufacturing a highly latchup-immune CMOS I/O structure

TAIWAN SEMICONDUCTOR MFG24 citations92
US6258672B1Jul 10, 2001

Method of fabricating an ESD protection device

TAIWAN SEMICONDUCTOR MFG20 citations92
US6235600B1May 22, 2001

Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner deposition

TAIWAN SEMICONDUCTOR MFG29 citations92
US6459127B1Oct 1, 2002

Uniform current distribution SCR device for high voltage ESD protection

TAIWAN SEMICONDUCTOR MFG26 citations91
US6207482B1Mar 27, 2001

Integration method for deep sub-micron dual gate transistor design

TAIWAN SEMICONDUCTOR MFG29 citations90
US5783850AJul 21, 1998

Undoped polysilicon gate process for NMOS ESD protection circuits

TAIWAN SEMICONDUCTOR MFG40 citations87
US5532178AJul 2, 1996

Gate process for NMOS ESD protection circuits

TAIWAN SEMICONDUCTOR MFG31 citations86
US7518192B2Apr 14, 2009

Asymmetrical layout structure for ESD protection

TAIWAN SEMICONDUCTOR MFG8 citations84
US6762439B1Jul 13, 2004

Diode for power protection

TAIWAN SEMICONDUCTOR MFG14 citations84
US6747857B1Jun 8, 2004

Clamping circuit for stacked NMOS ESD protection

TAIWAN SEMICONDUCTOR MFG15 citations84
US6541824B2Apr 1, 2003

Modified source side inserted anti-type diffusion ESD protection device

TAIWAN SEMICONDUCTOR MFG14 citations84
US6242314B1Jun 5, 2001

Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor

TAIWAN SEMICONDUCTOR MFG16 citations84
US6358781B1Mar 19, 2002

Uniform current distribution SCR device for high voltage ESD protection

TAIWAN SEMICONDUCTOR MFG14 citations82
US6437408B1Aug 20, 2002

Plasma damage protection cell using floating N/P/N and P/N/P structure

TAIWAN SEMICONDUCTOR MFG14 citations81
US5723352AMar 3, 1998

Process to optimize performance and reliability of MOSFET devices

TAIWAN SEMICONDUCTOR MFG18 citations77
US7994577B2Aug 9, 2011

ESD protection structures on SOI substrates

TAIWAN SEMICONDUCTOR MFG6 citations74
US7247543B2Jul 24, 2007

Decoupling capacitor

TAIWAN SEMICONDUCTOR MFG6 citations74
US6949802B2Sep 27, 2005

ESD protection structure

TAIWAN SEMICONDUCTOR MFG9 citations74
US6703663B1Mar 9, 2004

CMOS device using additional implant regions to enhance ESD performance and device manufactured thereby

TAIWAN SEMICONDUCTOR MFG6 citations74
US6426855B2Jul 30, 2002

ESD protection circuit for different power supplies

TAIWAN SEMICONDUCTOR MFG12 citations74
US6232160B1May 15, 2001

Method of delta-channel in deep sub-micron process

TAIWAN SEMICONDUCTOR MFG10 citations74
US6441438B1Aug 27, 2002

ESD protect device structure

TAIWAN SEMICONDUCTOR MFG10 citations73
US6100150AAug 8, 2000

Process to improve temperature uniformity during RTA by deposition of in situ poly on the wafer backside

TAIWAN SEMICONDUCTOR MFG13 citations72
US6582997B1Jun 24, 2003

ESD protection scheme for outputs with resistor loading

TAIWAN SEMICONDUCTOR MFG8 citations71
US7420793B2Sep 2, 2008

Circuit system for protecting thin dielectric devices from ESD induced damages

TAIWAN SEMICONDUCTOR MFG4 citations63
US6888248B2May 3, 2005

Extended length metal line for improved ESD performance

TAIWAN SEMICONDUCTOR MFG4 citations63
US6008974ADec 28, 1999

Electrostatic discharge protective circuit for reducing an undesired channel turn-on

TAIWAN SEMICONDUCTOR MFG4 citations63

TAIWAN SEMICONDUCTOR MFG CO LTD

5 patents

LIN BI-LING

1 patent

Showing the top 50 of 63 patents by PatentIndex Score.