Inventor
SHIH JIAW-REN
TW63 patents
⚠️ This page may combine multiple inventors who share the name “SHIH JIAW-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
44 patentsUS6207532B1Mar 27, 2001
STI process for improving isolation for deep sub-micron application
TAIWAN SEMICONDUCTOR MFG175 citations99
US6614693B1Sep 2, 2003
Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM
TAIWAN SEMICONDUCTOR MFG77 citations98
US6268992B1Jul 31, 2001
Displacement current trigger SCR
TAIWAN SEMICONDUCTOR MFG48 citations96
US6214670B1Apr 10, 2001
Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance
TAIWAN SEMICONDUCTOR MFG68 citations96
US6122201ASep 19, 2000
Clipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROM
TAIWAN SEMICONDUCTOR MFG79 citations96
US6097066AAug 1, 2000
Electro-static discharge protection structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG77 citations96
US6937457B2Aug 30, 2005
Decoupling capacitor
TAIWAN SEMICONDUCTOR MFG37 citations93
US6362035B1Mar 26, 2002
Channel stop ion implantation method for CMOS integrated circuits
TAIWAN SEMICONDUCTOR MFG26 citations93
US6323523B1Nov 27, 2001
N-type structure for n-type pull-up and down I/O protection circuit
TAIWAN SEMICONDUCTOR MFG25 citations93
US6306695B1Oct 23, 2001
Modified source side inserted anti-type diffusion ESD protection device
TAIWAN SEMICONDUCTOR MFG20 citations93
US6277723B1Aug 21, 2001
Plasma damage protection cell using floating N/P/N and P/N/P structure
TAIWAN SEMICONDUCTOR MFG24 citations93
US6271999B1Aug 7, 2001
ESD protection circuit for different power supplies
TAIWAN SEMICONDUCTOR MFG17 citations93
US6249414B1Jun 19, 2001
Displacement current trigger SCR
TAIWAN SEMICONDUCTOR MFG32 citations93
US6190954B1Feb 20, 2001
Robust latchup-immune CMOS structure
TAIWAN SEMICONDUCTOR MFG36 citations93
US6171891B1Jan 9, 2001
Method of manufacture of CMOS device using additional implant regions to enhance ESD performance
TAIWAN SEMICONDUCTOR MFG32 citations93
US5891792AApr 6, 1999
ESD device protection structure and process with high tilt angle GE implant
TAIWAN SEMICONDUCTOR MFG28 citations93
US6614078B2Sep 2, 2003
Highly latchup-immune CMOS I/O structures
TAIWAN SEMICONDUCTOR MFG21 citations92
US6420221B1Jul 16, 2002
Method of manufacturing a highly latchup-immune CMOS I/O structure
TAIWAN SEMICONDUCTOR MFG24 citations92
US6258672B1Jul 10, 2001
Method of fabricating an ESD protection device
TAIWAN SEMICONDUCTOR MFG20 citations92
US6235600B1May 22, 2001
Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner deposition
TAIWAN SEMICONDUCTOR MFG29 citations92
US6459127B1Oct 1, 2002
Uniform current distribution SCR device for high voltage ESD protection
TAIWAN SEMICONDUCTOR MFG26 citations91
US6207482B1Mar 27, 2001
Integration method for deep sub-micron dual gate transistor design
TAIWAN SEMICONDUCTOR MFG29 citations90
US5783850AJul 21, 1998
Undoped polysilicon gate process for NMOS ESD protection circuits
TAIWAN SEMICONDUCTOR MFG40 citations87
US5532178AJul 2, 1996
Gate process for NMOS ESD protection circuits
TAIWAN SEMICONDUCTOR MFG31 citations86
US7518192B2Apr 14, 2009
Asymmetrical layout structure for ESD protection
TAIWAN SEMICONDUCTOR MFG8 citations84
US6762439B1Jul 13, 2004
Diode for power protection
TAIWAN SEMICONDUCTOR MFG14 citations84
US6747857B1Jun 8, 2004
Clamping circuit for stacked NMOS ESD protection
TAIWAN SEMICONDUCTOR MFG15 citations84
US6541824B2Apr 1, 2003
Modified source side inserted anti-type diffusion ESD protection device
TAIWAN SEMICONDUCTOR MFG14 citations84
US6242314B1Jun 5, 2001
Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor
TAIWAN SEMICONDUCTOR MFG16 citations84
US6358781B1Mar 19, 2002
Uniform current distribution SCR device for high voltage ESD protection
TAIWAN SEMICONDUCTOR MFG14 citations82
US6437408B1Aug 20, 2002
Plasma damage protection cell using floating N/P/N and P/N/P structure
TAIWAN SEMICONDUCTOR MFG14 citations81
US5723352AMar 3, 1998
Process to optimize performance and reliability of MOSFET devices
TAIWAN SEMICONDUCTOR MFG18 citations77
US7994577B2Aug 9, 2011
ESD protection structures on SOI substrates
TAIWAN SEMICONDUCTOR MFG6 citations74
US7247543B2Jul 24, 2007
Decoupling capacitor
TAIWAN SEMICONDUCTOR MFG6 citations74
US6949802B2Sep 27, 2005
ESD protection structure
TAIWAN SEMICONDUCTOR MFG9 citations74
US6703663B1Mar 9, 2004
CMOS device using additional implant regions to enhance ESD performance and device manufactured thereby
TAIWAN SEMICONDUCTOR MFG6 citations74
US6426855B2Jul 30, 2002
ESD protection circuit for different power supplies
TAIWAN SEMICONDUCTOR MFG12 citations74
US6232160B1May 15, 2001
Method of delta-channel in deep sub-micron process
TAIWAN SEMICONDUCTOR MFG10 citations74
US6441438B1Aug 27, 2002
ESD protect device structure
TAIWAN SEMICONDUCTOR MFG10 citations73
US6100150AAug 8, 2000
Process to improve temperature uniformity during RTA by deposition of in situ poly on the wafer backside
TAIWAN SEMICONDUCTOR MFG13 citations72
US6582997B1Jun 24, 2003
ESD protection scheme for outputs with resistor loading
TAIWAN SEMICONDUCTOR MFG8 citations71
US7420793B2Sep 2, 2008
Circuit system for protecting thin dielectric devices from ESD induced damages
TAIWAN SEMICONDUCTOR MFG4 citations63
US6888248B2May 3, 2005
Extended length metal line for improved ESD performance
TAIWAN SEMICONDUCTOR MFG4 citations63
US6008974ADec 28, 1999
Electrostatic discharge protective circuit for reducing an undesired channel turn-on
TAIWAN SEMICONDUCTOR MFG4 citations63
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS10032869B2Jul 24, 2018
Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9373712B2Jun 21, 2016
Transistor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11616124B2Mar 28, 2023
Method of making fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12046638B2Jul 23, 2024
Fin field effect transistor (FinFET) device having position-dependent heat generation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107889B2Aug 31, 2021
Fin field effect transistor (FinFET) device having position-dependent heat generation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
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