P

Inventor

HARRIS CHRISTOPHER

SE94 patents
⚠️ This page may combine multiple inventors who share the name “HARRIS CHRISTOPHER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ABB RESEARCH LTD

15 patents
US5763905AJun 9, 1998

Semiconductor device having a passivation layer

ABB RESEARCH LTD94 citations98
US6091108AJul 18, 2000

Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage

ABB RESEARCH LTD115 citations97
US6025608AFeb 15, 2000

Semiconductor device of SiC with insulating layer and a refractory metal nitride layer

ABB RESEARCH LTD89 citations97
US5851908ADec 22, 1998

Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC

ABB RESEARCH LTD71 citations96
US5804483ASep 8, 1998

Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device

ABB RESEARCH LTD90 citations96
US5663580ASep 2, 1997

Optically triggered semiconductor device

ABB RESEARCH LTD68 citations96
US5654208AAug 5, 1997

Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step

ABB RESEARCH LTD62 citations96
US6150671ANov 21, 2000

Semiconductor device having high channel mobility and a high breakdown voltage for high power applications

ABB RESEARCH LTD24 citations92
US6096627AAug 1, 2000

Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC

ABB RESEARCH LTD21 citations92
US5900648AMay 4, 1999

Semiconductor device having an insulated gate

ABB RESEARCH LTD46 citations92
US5831292ANov 3, 1998

IGBT having a vertical channel

ABB RESEARCH LTD24 citations92
US5650638AJul 22, 1997

Semiconductor device having a passivation layer

ABB RESEARCH LTD19 citations92
US5923051AJul 13, 1999

Field controlled semiconductor device of SiC and a method for production thereof

ABB RESEARCH LTD18 citations84
US5798293AAug 25, 1998

Method for producing a semiconductor layer of SiC of the 3C-polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer

ABB RESEARCH LTD17 citations84
US5786251AJul 28, 1998

Method for producing a channel region layer in a voltage controlled semiconductor device

ABB RESEARCH LTD18 citations84

CREE INC

7 patents

PROCTER & GAMBLE

4 patents

ACREO AB

3 patents

ASEA BROWN BOVERI

2 patents

SANTIAGO TODD MATTHEW

2 patents

HARRIS CHRISTOPHER

2 patents

IBM

2 patents

ICI PLC

1 patent

UROPLASTY INC

1 patent

WOODWARD MARK L

1 patent

MONSANTO EUROPE SA

1 patent

SMITH & NEPHEW ASS

1 patent

ANCHOR CONTINENTAL INC

1 patent

ASTRAZENECA AB

1 patent

GRAND RAPIDS LABEL COMPANY

1 patent

LEVER BROTHERS COMPANY DIV OF CONOPCO INC

1 patent

(unassigned)

1 patent

ENERGIZER BRANDS LLC

1 patent

BARD LTD

1 patent

BELOZEROVA VLADLENA

1 patent

Showing the top 50 of 94 patents by PatentIndex Score.