Inventor
ARAI NORIHISA
JP30 patents
⚠️ This page may combine multiple inventors who share the name “ARAI NORIHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
26 patentsUS6680230B2Jan 20, 2004
Semiconductor device and method of fabricating the same
TOSHIBA KK36 citations93
US6828627B2Dec 7, 2004
Semiconductor device
TOSHIBA KK23 citations92
US6703669B1Mar 9, 2004
Semiconductor device having serially connected memory cell transistors provided between two current terminals
TOSHIBA KK23 citations92
US6534867B1Mar 18, 2003
Semiconductor device, semiconductor element and method for producing same
TOSHIBA KK34 citations92
US6521927B2Feb 18, 2003
Semiconductor device and method for the manufacture thereof
TOSHIBA KK41 citations92
US6342719B1Jan 29, 2002
Semiconductor device having a double-well structure and method for manufacturing the same
TOSHIBA KK18 citations92
US6034567AMar 7, 2000
Semiconductor integrated circuit device provided with a differential amplifier
TOSHIBA KK29 citations92
US5716863AFeb 10, 1998
Method of manufacturing semiconductor device having elements different in gate oxide thickness and resistive elements
TOSHIBA KK46 citations92
US5389808AFeb 14, 1995
Non-volatile semiconductor memory with increased capacitance between floating and control gates
TOSHIBA KK39 citations92
US6333548B1Dec 25, 2001
Semiconductor device with etch stopping film
TOSHIBA KK18 citations90
US6020229AFeb 1, 2000
Semiconductor device method for manufacturing
TOSHIBA KK36 citations90
US5469397ANov 21, 1995
Semiconductor memory device with a reference potential generator
TOSHIBA KK42 citations87
US6927116B2Aug 9, 2005
Semiconductor device having a double-well structure and method for manufacturing the same
TOSHIBA KK15 citations84
US6084283AJul 4, 2000
Semiconductor device and method of manufacturing the same
TOSHIBA KK16 citations84
US6699726B2Mar 2, 2004
Semiconductor device and method for the manufacture thereof
TOSHIBA KK15 citations83
US5933731AAug 3, 1999
Semiconductor device having gate oxide films having different thicknesses and manufacturing method thereof
TOSHIBA KK17 citations81
US6656800B2Dec 2, 2003
Method of manufacturing semiconductor device including process for implanting impurities into substrate via MOS transistor gate electrode and gate insulation film
TOSHIBA KK9 citations74
US6461921B1Oct 8, 2002
Semiconductor device having channel stopper portions integrally formed as part of a well
TOSHIBA KK8 citations74
US6111295AAug 29, 2000
Semiconductor device having channel stopper portions integrally formed as part of a well
TOSHIBA KK13 citations74
US9576881B2Feb 21, 2017
Semiconductor device
TOSHIBA KK2 citations72
US7238563B2Jul 3, 2007
Semiconductor device having isolation region and method of manufacturing the same
TOSHIBA KK4 citations63
US9147641B2Sep 29, 2015
Semiconductor device
TOSHIBA KK2 citations57
US8013381B2Sep 6, 2011
Semiconductor device
TOSHIBA KK2 citations55
US7813179B2Oct 12, 2010
Semiconductor memory device having plural word lines arranged at narrow pitch and manufacturing method thereof
TOSHIBA KK0 citations52
US7087960B2Aug 8, 2006
Semiconductor device including impurities in substrate via MOS transistor gate electrode and gate insulation film
TOSHIBA KK0 citations52
US9705009B2Jul 11, 2017
Semiconductor device
TOSHIBA KK1 citations51