Inventor
HE YUESONG
US15 patents
⚠️ This page may combine multiple inventors who share the name “HE YUESONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
13 patentsUS6355522B1Mar 12, 2002
Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices
ADVANCED MICRO DEVICES INC21 citations92
US6204159B1Mar 20, 2001
Method of forming select gate to improve reliability and performance for NAND type flash memory devices
ADVANCED MICRO DEVICES INC36 citations92
US6812521B1Nov 2, 2004
Method and apparatus for improved performance of flash memory cell devices
ADVANCED MICRO DEVICES INC14 citations79
US6146795ANov 14, 2000
Method for manufacturing memory devices
ADVANCED MICRO DEVICES INC12 citations73
US6114230ASep 5, 2000
Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates
ADVANCED MICRO DEVICES INC9 citations73
US6066873AMay 23, 2000
Method and apparatus for preventing P1 punchthrough
ADVANCED MICRO DEVICES INC9 citations73
US6063668AMay 16, 2000
Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices
ADVANCED MICRO DEVICES INC12 citations73
US5981339ANov 9, 1999
Narrower erase distribution for flash memory by smaller poly grain size
ADVANCED MICRO DEVICES INC15 citations73
US6177312B1Jan 23, 2001
Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device
ADVANCED MICRO DEVICES INC5 citations62
US6281078B1Aug 28, 2001
Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices
ADVANCED MICRO DEVICES INC6 citations61
US6184084B1Feb 6, 2001
Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it
ADVANCED MICRO DEVICES INC1 citations52
US5972749AOct 26, 1999
Method for preventing P1 punchthrough
ADVANCED MICRO DEVICES INC0 citations51
US6017786AJan 25, 2000
Method for forming a low barrier height oxide layer on a silicon substrate
ADVANCED MICRO DEVICES INC1 citations45