Inventor
TZU SAN-DE
TW42 patents
⚠️ This page may combine multiple inventors who share the name “TZU SAN-DE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
39 patentsUS6022644AFeb 8, 2000
Mask containing subresolution line to minimize proximity effect of contact hole
TAIWAN SEMICONDUCTOR MFG69 citations96
US6423455B1Jul 23, 2002
Method for fabricating a multiple masking layer photomask
TAIWAN SEMICONDUCTOR MFG28 citations93
US6134014AOct 17, 2000
Apparatus and method of inspecting phase shift masks using comparison of a mask die image to the mask image database
TAIWAN SEMICONDUCTOR MFG48 citations93
US6093507AJul 25, 2000
Simplified process for fabricating levinson and chromeless type phase shifting masks
TAIWAN SEMICONDUCTOR MFG21 citations93
US6077633AJun 20, 2000
Mask and method of forming a mask for avoiding side lobe problems in forming contact holes
TAIWAN SEMICONDUCTOR MFG30 citations93
US6051347AApr 18, 2000
Application of e-beam proximity over-correction to compensate optical proximity effect in optical lithography process
TAIWAN SEMICONDUCTOR MFG27 citations93
US5994009ANov 30, 1999
Interlayer method utilizing CAD for process-induced proximity effect correction
TAIWAN SEMICONDUCTOR MFG67 citations93
US5858591AJan 12, 1999
Optical proximity correction during wafer processing through subfile bias modification with subsequent subfile merging
TAIWAN SEMICONDUCTOR MFG28 citations93
US5853923ADec 29, 1998
Double layer method for fabricating a rim type attenuating phase shifting mask
TAIWAN SEMICONDUCTOR MFG23 citations93
US6294295B1Sep 25, 2001
Variable transmittance phase shifter to compensate for side lobe problem on rim type attenuating phase shifting masks
TAIWAN SEMICONDUCTOR MFG26 citations92
US6194103B1Feb 27, 2001
E-beam double exposure method for manufacturing ASPM mask with chrome border
TAIWAN SEMICONDUCTOR MFG21 citations92
US5783337AJul 21, 1998
Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border
TAIWAN SEMICONDUCTOR MFG39 citations92
US6872507B2Mar 29, 2005
Radiation correction method for electron beam lithography
TAIWAN SEMICONDUCTOR MFG30 citations91
US6190809B1Feb 20, 2001
Cost-effective method to fabricate a combined attenuated-alternating phase shift mask
TAIWAN SEMICONDUCTOR MFG24 citations91
US6007324ADec 28, 1999
Double layer method for fabricating a rim type attenuating phase shifting mask
TAIWAN SEMICONDUCTOR MFG34 citations91
US6001512ADec 14, 1999
Method of blind border pattern layout for attenuated phase shifting masks
TAIWAN SEMICONDUCTOR MFG34 citations91
US5888678AMar 30, 1999
Mask and simplified method of forming a mask integrating attenuating phase shifting mask patterns and binary mask patterns on the same mask substrate
TAIWAN SEMICONDUCTOR MFG25 citations91
US5897979AApr 27, 1999
Method of forming multiple layer attenuating phase shifting masks
TAIWAN SEMICONDUCTOR MFG17 citations90
US5792578AAug 11, 1998
Method of forming multiple layer attenuating phase shifting masks
TAIWAN SEMICONDUCTOR MFG21 citations90
US6660653B1Dec 9, 2003
Dual trench alternating phase shift mask fabrication
TAIWAN SEMICONDUCTOR MFG19 citations89
US6174801B1Jan 16, 2001
E-beam direct writing to pattern step profiles of dielectric layers applied to fill poly via with poly line, contact with metal line, and metal via with metal line
TAIWAN SEMICONDUCTOR MFG17 citations83
US6720116B1Apr 13, 2004
Process flow and pellicle type for 157 nm mask making
TAIWAN SEMICONDUCTOR MFG17 citations82
US6630408B1Oct 7, 2003
Self alignment process to fabricate attenuated shifting mask with chrome border
TAIWAN SEMICONDUCTOR MFG18 citations82
US6830853B1Dec 14, 2004
Chrome mask dry etching process to reduce loading effect and defects
TAIWAN SEMICONDUCTOR MFG18 citations81
US6495297B1Dec 17, 2002
Type mask for combining off axis illumination and attenuating phase shifting mask patterns
TAIWAN SEMICONDUCTOR MFG7 citations74
US6403267B1Jun 11, 2002
Method for high transmittance attenuated phase-shifting mask fabrication
TAIWAN SEMICONDUCTOR MFG11 citations74
US6150058ANov 21, 2000
Method of making attenuating phase-shifting mask using different exposure doses
TAIWAN SEMICONDUCTOR MFG14 citations74
US6018392AJan 25, 2000
Apparatus and method for inspecting phase shifting masks
TAIWAN SEMICONDUCTOR MFG10 citations74
US6432588B1Aug 13, 2002
Method of forming an improved attenuated phase-shifting photomask
TAIWAN SEMICONDUCTOR MFG8 citations73
US6277528B1Aug 21, 2001
Method to change transmittance of attenuated phase-shifting masks
TAIWAN SEMICONDUCTOR MFG9 citations73
US6251547B1Jun 26, 2001
Simplified process for making an outrigger type phase shift mask
TAIWAN SEMICONDUCTOR MFG12 citations73
US5817439AOct 6, 1998
Method of blind border pattern layout for attenuated phase shifting masks
TAIWAN SEMICONDUCTOR MFG12 citations73
US6631307B1Oct 7, 2003
Use of logical operations in place of OPC software
TAIWAN SEMICONDUCTOR MFG12 citations72
US6261725B1Jul 17, 2001
Phase angle modulation of PSM by chemical treatment method
TAIWAN SEMICONDUCTOR MFG8 citations72
US6632590B1Oct 14, 2003
Enhance the process window of memory cell line/space dense pattern in sub-wavelength process
TAIWAN SEMICONDUCTOR MFG8 citations70
US6171914B1Jan 9, 2001
Synchronized implant process to simplify NLDD/PLDD stage and N+/P+stage into one implant
TAIWAN SEMICONDUCTOR MFG8 citations66
US6301698B1Oct 9, 2001
Method for creating the sub-resolution phase shifting pattern for outrigger type phase shifting masks
TAIWAN SEMICONDUCTOR MFG4 citations63
US6830702B2Dec 14, 2004
Single trench alternating phase shift mask fabrication
TAIWAN SEMICONDUCTOR MFG4 citations60
US7445159B2Nov 4, 2008
Dual trench alternating phase shift mask fabrication
TAIWAN SEMICONDUCTOR MFG3 citations56