Inventor
TSAI JUN-LIN
TW15 patents
Patents
15 patentsUS6340833B1Jan 22, 2002
Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusion
TAIWAN SEMICONDUCTOR MFG16 citations92
US6165861ADec 26, 2000
Integrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusion
TAIWAN SEMICONDUCTOR MFG29 citations92
US6096629AAug 1, 2000
Uniform sidewall profile etch method for forming low contact leakage schottky diode contact
TAIWAN SEMICONDUCTOR MFG53 citations92
US6569730B2May 27, 2003
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG13 citations83
US6245609B1Jun 12, 2001
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG8 citations73
US7015086B2Mar 21, 2006
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
TAIWAN SEMICONDUCTOR MFG10 citations72
US6242313B1Jun 5, 2001
Use of polysilicon field plates to improve high voltage bipolar device breakdown voltage
TAIWAN SEMICONDUCTOR MFG12 citations71
US6211028B1Apr 3, 2001
Twin current bipolar device with hi-lo base profile
TAIWAN SEMICONDUCTOR MFG7 citations71
US7372102B2May 13, 2008
Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
TAIWAN SEMICONDUCTOR MFG3 citations61
US6396126B1May 28, 2002
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG2 citations61
US6291304B1Sep 18, 2001
Method of fabricating a high voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG5 citations61
US6162695ADec 19, 2000
Field ring to improve the breakdown voltage for a high voltage bipolar device
TAIWAN SEMICONDUCTOR MFG4 citations61
US6423590B2Jul 23, 2002
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG2 citations57
US7250344B2Jul 31, 2007
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
TAIWAN SEMICONDUCTOR MFG0 citations50
US6747336B2Jun 8, 2004
Twin current bipolar device with hi-lo base profile
TAIWAN SEMICONDUCTOR MFG0 citations49