Inventor
HWANG JEI-FENG
TW7 patents
Patents
7 patentsUS6569730B2May 27, 2003
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG13 citations83
US6245609B1Jun 12, 2001
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG8 citations73
US6242313B1Jun 5, 2001
Use of polysilicon field plates to improve high voltage bipolar device breakdown voltage
TAIWAN SEMICONDUCTOR MFG12 citations71
US6396126B1May 28, 2002
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG2 citations61
US6291304B1Sep 18, 2001
Method of fabricating a high voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG5 citations61
US6162695ADec 19, 2000
Field ring to improve the breakdown voltage for a high voltage bipolar device
TAIWAN SEMICONDUCTOR MFG4 citations61
US6423590B2Jul 23, 2002
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG2 citations57