Inventor
KIM SEONBAE
KR6 patents
Patents
6 patentsUS12382681B2Aug 5, 2025
Multi-bridge channel field effect transistor with reduced gate-channel leakage current
SAMSUNG ELECTRONICS CO LTD2 citations73
US12034041B2Jul 9, 2024
Semiconductor devices having gate isolation layers
SAMSUNG ELECTRONICS CO LTD0 citations61
US11664418B2May 30, 2023
Semiconductor devices having gate isolation layers
SAMSUNG ELECTRONICS CO LTD0 citations61
US12525535B2Jan 13, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12563775B2Feb 24, 2026
Transistor devices having buried interconnection line below source/drain regions and one or more protective layers covering lower surfaces of gate structures
SAMSUNG ELECTRONICS CO LTD0 citations47
US12364007B2Jul 15, 2025
Integrated circuit device including insulating guide film between adjacent conductive patterns
SAMSUNG ELECTRONICS CO LTD0 citations41