Inventor
NAGATOMO MASAO
JP18 patents
Patents
18 patentsUS5164806ANov 17, 1992
Element isolating structure of semiconductor device suitable for high density integration
MITSUBISHI ELECTRIC CORP68 citations96
US5112771AMay 12, 1992
Method of fibricating a semiconductor device having a trench
MITSUBISHI ELECTRIC CORP90 citations96
US5888851AMar 30, 1999
Method of manufacturing a semiconductor device having a circuit portion and redundant circuit portion coupled through a meltable connection
MITSUBISHI ELECTRIC CORP27 citations92
US5323343AJun 21, 1994
DRAM device comprising a stacked type capacitor and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP33 citations92
US5241212AAug 31, 1993
Semiconductor device having a redundant circuit portion and a manufacturing method of the same
MITSUBISHI ELECTRIC CORP44 citations92
US5047359ASep 10, 1991
Method of implanting into the sidewall of a trench by rotating the wafer
MITSUBISHI ELECTRIC CORP34 citations92
US4985368AJan 15, 1991
Method for making semiconductor device with no stress generated at the trench corner portion
MITSUBISHI ELECTRIC CORP24 citations92
US4984055AJan 8, 1991
Semiconductor device having a plurality of conductive layers and manufacturing method therefor
MITSUBISHI ELECTRIC CORP33 citations92
US4894695AJan 16, 1990
Semiconductor device with no stress generated at the trench corner portion and the method for making the same
MITSUBISHI ELECTRIC CORP27 citations92
US4341616AJul 27, 1982
Dry etching device
MITSUBISHI ELECTRIC CORP20 citations81
US4333226AJun 8, 1982
Method of forming patterned refractory metal films by selective oxygen implant and sublimation
MITSUBISHI ELECTRIC CORP24 citations80
US4956692ASep 11, 1990
Semiconductor device having an isolation oxide film
MITSUBISHI ELECTRIC CORP11 citations74
US4702796AOct 27, 1987
Method for fabricting a semiconductor device
MITSUBISHI ELECTRIC CORP9 citations74
US5153689AOct 6, 1992
Semiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word lines
MITSUBISHI ELECTRIC CORP14 citations73
US4905068AFeb 27, 1990
Semiconductor device having interconnection layers of T-shape cross section
MITSUBISHI ELECTRIC CORP16 citations73
US5300444AApr 5, 1994
Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film
MITSUBISHI ELECTRIC CORP9 citations71
US4956310ASep 11, 1990
Semiconductor memory device and fabricating method thereof
MITSUBISHI ELECTRIC CORP0 citations52
US4763182AAug 9, 1988
Semiconductor memory device with deep bit-line channel stopper
MITSUBISHI ELECTRIC CORP0 citations42