P

Inventor

JEON JOONG

US20 patents
⚠️ This page may combine multiple inventors who share the name “JEON JOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

12 patents
US6620671B1Sep 16, 2003

Method of fabricating transistor having a single crystalline gate conductor

ADVANCED MICRO DEVICES INC135 citations98
US6562491B1May 13, 2003

Preparation of composite high-K dielectrics

ADVANCED MICRO DEVICES INC147 citations98
US6559014B1May 6, 2003

Preparation of composite high-K / standard-K dielectrics for semiconductor devices

ADVANCED MICRO DEVICES INC167 citations98
US6187657B1Feb 13, 2001

Dual material gate MOSFET technique

ADVANCED MICRO DEVICES INC120 citations98
US6790755B2Sep 14, 2004

Preparation of stack high-K gate dielectrics with nitrided layer

ADVANCED MICRO DEVICES INC75 citations97
US6621114B1Sep 16, 2003

MOS transistors with high-k dielectric gate insulator for reducing remote scattering

ADVANCED MICRO DEVICES INC60 citations96
US6607973B1Aug 19, 2003

Preparation of high-k nitride silicate layers by cyclic molecular layer deposition

ADVANCED MICRO DEVICES INC57 citations96
US6448127B1Sep 10, 2002

Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfets

ADVANCED MICRO DEVICES INC69 citations92
US6376323B1Apr 23, 2002

Fabrication of gate of P-channel field effect transistor with added implantation before patterning of the gate

ADVANCED MICRO DEVICES INC26 citations92
US7294547B1Nov 13, 2007

SONOS memory cell having a graded high-K dielectric

ADVANCED MICRO DEVICES INC12 citations83
US7033894B1Apr 25, 2006

Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealing

ADVANCED MICRO DEVICES INC2 citations63
US6759346B1Jul 6, 2004

Method of forming dielectric layers

ADVANCED MICRO DEVICES INC5 citations62

SPANSION LLC

7 patents

XUE LEI

1 patent