Inventor
JEON JOONG
US20 patents
⚠️ This page may combine multiple inventors who share the name “JEON JOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
12 patentsUS6620671B1Sep 16, 2003
Method of fabricating transistor having a single crystalline gate conductor
ADVANCED MICRO DEVICES INC135 citations98
US6562491B1May 13, 2003
Preparation of composite high-K dielectrics
ADVANCED MICRO DEVICES INC147 citations98
US6559014B1May 6, 2003
Preparation of composite high-K / standard-K dielectrics for semiconductor devices
ADVANCED MICRO DEVICES INC167 citations98
US6187657B1Feb 13, 2001
Dual material gate MOSFET technique
ADVANCED MICRO DEVICES INC120 citations98
US6790755B2Sep 14, 2004
Preparation of stack high-K gate dielectrics with nitrided layer
ADVANCED MICRO DEVICES INC75 citations97
US6621114B1Sep 16, 2003
MOS transistors with high-k dielectric gate insulator for reducing remote scattering
ADVANCED MICRO DEVICES INC60 citations96
US6607973B1Aug 19, 2003
Preparation of high-k nitride silicate layers by cyclic molecular layer deposition
ADVANCED MICRO DEVICES INC57 citations96
US6448127B1Sep 10, 2002
Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfets
ADVANCED MICRO DEVICES INC69 citations92
US6376323B1Apr 23, 2002
Fabrication of gate of P-channel field effect transistor with added implantation before patterning of the gate
ADVANCED MICRO DEVICES INC26 citations92
US7294547B1Nov 13, 2007
SONOS memory cell having a graded high-K dielectric
ADVANCED MICRO DEVICES INC12 citations83
US7033894B1Apr 25, 2006
Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealing
ADVANCED MICRO DEVICES INC2 citations63
US6759346B1Jul 6, 2004
Method of forming dielectric layers
ADVANCED MICRO DEVICES INC5 citations62
SPANSION LLC
7 patentsUS7365389B1Apr 29, 2008
Memory cell having enhanced high-K dielectric
SPANSION LLC89 citations98
US7196008B1Mar 27, 2007
Aluminum oxide as liner or cover layer to spacers in memory device
SPANSION LLC11 citations84
US7863128B1Jan 4, 2011
Non-volatile memory device with improved erase speed
SPANSION LLC2 citations62
US7446369B2Nov 4, 2008
SONOS memory cell having high-K dielectric
SPANSION LLC2 citations62
US7232724B1Jun 19, 2007
Radical oxidation for bitline oxide of SONOS
SPANSION LLC6 citations62
US7468296B1Dec 23, 2008
Thin film germanium diode with low reverse breakdown
SPANSION LLC4 citations60
US7863175B2Jan 4, 2011
Zero interface polysilicon to polysilicon gate for flash memory
SPANSION LLC0 citations36