Inventor

SHIOZAWA KATSUOMI

JP30 patents

⚠️ This page may combine multiple inventors who share the name “SHIOZAWA KATSUOMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIOZAWA KATSUOMI

MITSUBISHI ELECTRIC CORP

Semiconductor device having a buried-channel MOS structure

Semiconductor device comprising trench isolation insulator film and method of fabricating the same

Method of forming a truck MOS gate or a power semiconductor device

Trench gate type insulated gate bipolar transistor

Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round

Semiconductor device including inversely tapered gate electrode and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor device

Semiconductor device including trench isolation structure and a method of manufacturing thereof

Semiconductor device and method of fabricating same

Semiconductor device manufacturing method and semiconductor device

Semiconductor device manufacturing method and semiconductor device

Method for manufacturing semiconductor optical device

Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer

Method of manufacturing semiconductor device

Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round

Method for manufacturing nitride semiconductor light-emitting element

Nitride semiconductor device and manufacturing method thereof

Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer

Nitride semiconductor device and method of manufacturing the same

Nitride semiconductor device

Nitride semiconductor device and manufacturing method of the same

Nitride semiconductor device and method of manufacturing the same

Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof

Method of manufacturing nitride semiconductor device

Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact

RENESAS TECH CORP

Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate

Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate

Semiconductor device and manufacturing method thereof

SHIOZAWA KATSUOMI

Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof