Inventor
PERI SOMESH
US16 patents
⚠️ This page may combine multiple inventors who share the name “PERI SOMESH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES INC
10 patentsUS9842907B2Dec 12, 2017
Memory device containing cobalt silicide control gate electrodes and method of making thereof
SANDISK TECHNOLOGIES INC27 citations94
US9793139B2Oct 17, 2017
Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines
SANDISK TECHNOLOGIES INC38 citations94
US9780182B2Oct 3, 2017
Molybdenum-containing conductive layers for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES INC32 citations94
US9698152B2Jul 4, 2017
Three-dimensional memory structure with multi-component contact via structure and method of making thereof
SANDISK TECHNOLOGIES INC35 citations94
US9659955B1May 23, 2017
Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure
SANDISK TECHNOLOGIES INC46 citations94
US9646975B2May 9, 2017
Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES INC37 citations94
US9576966B1Feb 21, 2017
Cobalt-containing conductive layers for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES INC25 citations94
US9530785B1Dec 27, 2016
Three-dimensional memory devices having a single layer channel and methods of making thereof
SANDISK TECHNOLOGIES INC24 citations93
US9754958B2Sep 5, 2017
Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof
SANDISK TECHNOLOGIES INC17 citations84
US9515079B2Dec 6, 2016
Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
SANDISK TECHNOLOGIES INC13 citations84
SANDISK TECHNOLOGIES LLC
6 patentsUS9984963B2May 29, 2018
Cobalt-containing conductive layers for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES LLC37 citations94
US10622368B2Apr 14, 2020
Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof
SANDISK TECHNOLOGIES LLC7 citations84
US10355139B2Jul 16, 2019
Three-dimensional memory device with amorphous barrier layer and method of making thereof
SANDISK TECHNOLOGIES LLC11 citations84
US9806089B2Oct 31, 2017
Method of making self-assembling floating gate electrodes for a three-dimensional memory device
SANDISK TECHNOLOGIES LLC19 citations84
US9893081B1Feb 13, 2018
Ridged word lines for increasing control gate lengths in a three-dimensional memory device
SANDISK TECHNOLOGIES LLC3 citations73
US9812463B2Nov 7, 2017
Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof
SANDISK TECHNOLOGIES LLC6 citations72